NE4210S01
NE4210S01 NONLINEAR MODEL
Note:
This non-linear model was developed for the NE3210S01 and is
generally applicable for NE4210S01 designs.
SCHEMATIC
CGD_PKG
0.001pF
Ldx
DRAIN
Lgx
GATE
Rgx 0.72nH
6 ohms
CGS_PKG
0.04pF
Lsx
0.1nH
Rsx
0.06 ohms
CDS_PKG
0.035PF
Q1
0.68nH
Rdx
6 ohms
SOURCE
FET NONLINEAR MODEL PARAMETERS
(1)
Parameters
VTO
VTOSC
ALPHA
BETA
GAMMA
GAMMADC
Q
DELTA
VBI
IS
N
RIS
RID
TAU
CDS
RDB
CBS
CGSO
CGDO
DELTA1
DELTA2
FC
Q1
-0.798
0
8
0.0952
0.072
0.065
2.5
0.5
0.6
1e-14
1
0
0
4e-12
0.12e-12
5000
1e-9
0.36e-12
0.014e-12
0.3
0.6
0.5
Parameters
RG
RD
RS
RGMET
KF
AF
TNOM
XTI
EG
VTOTC
BETATCE
FFE
Q1
8
0.5
3
0
0
1
27
3
1.43
0
0
1
UNITS
Parameter
time
capacitance
inductance
resistance
voltage
current
Units
seconds
farads
henries
ohms
volts
amps
MODEL RANGE
Frequency: 0.1 to 22.5 GHz
Bias:
V
DS
= 1 V to 3 V, I
D
= 5 mA to 30 mA
Date:
1/99
VBR
Infinity
(1) Series IV Libra TOM Model
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
09/12/2005
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
CEL [ CALIFORNIA EASTERN LABS ]
