NEC'
S
3.2 V, 3 W, L/S BAND
NE5520379A
MEDIUM POWER SILICON LD-MOSFET
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE
• HIGH OUTPUT POWER:
+35.5 dBm TYP
• HIGH LINEAR GAIN:
16 dB TYP @ 915 MHz
• HIGH POWER ADDED EFFICIENCY:
65% TYP @
V
DS
= 3.2 V, f = 915 MHz
5.7 MAX.
0.6±0.15
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
(Bottom View)
4.2 MAX.
1.5±0.2
Source
Source
9Z001
3
Gate
Drain
4.4 MAX.
0.8±0.15
Gate
1.0 MAX.
Drain
1.2 MAX.
• SINGLE SUPPLY:
2.8 to 6.0 V
• CLASS AB OPERATION
• SURFACE MOUNT PACKAGE:
5.7
x
5.7
x
1.1 mm MAX
A
0.4±0.15
0.8 MAX.
3.6±0.2
0.2±0.1
DESCRIPTION
NEC's NE5520379A is an N-Channel silicon power MOSFET
specially designed as the transmission power amplifier for
3.2 V GSM900 handsets. Die are manufactured using NEC's
NEWMOS technology (NEC's 0.6
μm
WSi gate lateral MOS-
FET) and housed in a surface mount package. This device
can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or
34.6 dBm output power at 2.8 V by varying the gate voltage
as a power control function.
0.9±0.2
5.7 MAX.
APPLICATIONS
• DIGITAL CELLULAR PHONES:
3.2 V GSM900/DCS 1800 Dual Band Handsets
• OTHERS:
Two-Way Pagers
Retail Business Radio
Special Mobile Radio
Short Range Wireless
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
P
OUT
G
L
CHARACTERISTICS
Output Power
Linear Gain (at P
IN
= +10 dBm)
Drain Efficiency
Power Added Efficiency
Operating Drain Current
Output Power
Linear Gain (at P
IN
= +10 dBm)
Operating Drain Current
Drain Efficiency
Power Added Efficiency
Gate-to-Source Leakage Current
Drain-to-Source Leakage Current
Gate Threshold Voltage
Transconductance
Drain-to-Source Breakdown Voltage
Thermal Resistance
UNITS
dBm
dB
%
%
A
dBm
dB
mA
%
%
nA
nA
V
S
V
°C/W
15
1.0
29
31.0
MIN
NE5520379A
79A
TYP
35.5
16.0
68
65
1.0
33.0
8.5
750
38
35
100
100
1.35
2.5
20
5
2.0
V
GS
= 6.0 V
V
DS
= 8.5 V
V
DS
= 3.5 V, I
DS =
1 mA
V
DS
= 3.5 V, I
DS1 =
0.8 A, I
DS2 =
1.0 A
I
DSS
= 10 µA
Channel-to-Case
f = 1785 MHz, V
DS
= 3.2 V,
V
GS
= 2.5 V
(NOTE 1)
MAX
TEST CONDITIONS
f = 915 MHz, V
DS
= 3.2 V,
V
GS
= 2.5 V(RF OFF)
(NOTE 1)
η
D
Functional
Characteristics
η
ADD
I
D
P
OUT
G
L
I
D
η
D
η
ADD
Electrical DC
Characteristics
I
GSS
I
DSS
V
TH
gm
BV
DSS
R
TH
Note:
1. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
reject for several samples.
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
