NEC's 3W, L&S-BAND
NE6510179A
MEDIUM POWER GaAs HJ-FET
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE
Available on Tape and Reel
• USABLE TO 3.7 GHz:
Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
PCS
• HIGH OUTPUT POWER:
35 dBm TYP with 5.0 V Vdc
32.5 dBm TYP with 3.5 V Vdc
• HIGH LINEAR GAIN:
10 dB TYP at 1.9 GHz
0.9 – 0.2
4.2 MAX
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
1.5 – 0.2
Source
Source
5.7 MAX
0.6 – 0.15
X
I
Gate
Drain
0.8 – 0.15
4.4 MAX
Gate
1.0 MAX
Drain
1.2
MAX
0.8 MAX
3.6 – 0.2
T
5.7 MAX
9
0.4 – 0.15
• LOW THERMAL RESISTANCE:
5°C/W
0.2 – 0.1
BOTTOM VIEW
DESCRIPTION
NEC's NE6510179A is a GaAs HJ-FET designed for medium
power mobile communications, Fixed Wireless Access, ISM,
WLL, PCS, IMT-2000, and MMDS transmitter and subscriber
applications. It is capable of delivering 1.8 watts of output
power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5 V
with high linear gain, high efficiency, and excellent linearity.
Reliability and performance uniformity are assured by NEC's
stringent quality and control procedures.
Note: Unless otherwise specified, tolerance is
±0.2
mm
ELECTRICAL CHARACTERISTICS
(T
C
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
P
OUT
G
L
CHARACTERISTICS
Output Power
Linear Gain
1
= 25°C)
NE6510179A
79A
UNITS
dBm
dB
%
A
A
V
°C/W
V
12
-2.0
5
50
MIN
31.5
TYP
32.5
10.0
58
0.72
2.4
-0.4
8
V
DS
= 2.5 V; V
GS
= 0 V
V
DS
= 2.5 V; I
D
= 14 mA
Channel to Case
I
GD
= 14 mA
MAX
TEST CONDITIONS
f = 1900 MHz, V
DS
= 3.5 V,
Pin = +25 dBm, Rg = 100
Ω
I
DSQ
= 200 mA (RF OFF)
2
Functional
Characteristics
η
ADD
I
D
I
DSS
Power Added Efficiency
Drain Current
Saturated Drain Current
Pinch-Off Voltage
Thermal Resistance
Gate to Drain Breakdown Voltage
Electrical DC
Characteristics
V
P
R
TH
BV
GD
Notes:
1. Pin = 0 dBm
2. DC performance is tested 100% . Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
reject for several samples.
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
