NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
•
•
•
•
HIGH GAIN BANDWIDTH:
f
T
= 25 GHz
LOW NOISE FIGURE:
NF = 1.1 dB at 2 GHz
HIGH MAXIMUM STABLE GAIN:
20 dB at f = 2 GHz
NEW LOW PROFILE M16 PACKAGE:
•
Flat Lead Style with a height of just 0.50mm
NE662M16
DESCRIPTION
NEC's NE662M16 is fabricated using NEC's UHS0 25 GHz f
T
wafer process. With a typical transition frequency of 25 GHz
the NE662M16 is usable in applications from 100 MHz to over
10 GHz. The NE662M16 provides excellent low voltage/low
current performance.
NEC's new low profile/flat lead style "M16" package is ideal for
today's portable wireless applications. The NE662M16 is an
ideal choice for LNA and oscillator requirements in all mobile
communication systems.
M16
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current
Gain
2
at V
CE
= 2 V, I
C
= 5 mA
GHz
dB
dB
dB
dBm
pF
14
Gain Bandwidth at V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
Maximum Stable Gain
4
at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz, Z
IN
= Z
OPT
Output Power at 1 dB compression point at
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Third Order Intercept Point at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Feedback Capacitance
3
at V
CB
= 2 V, I
C
= 0, f = 1 MHz
UNITS
nA
nA
50
20
70
25
20
17
1.1
11
22
0.14
0.24
1.5
MIN
NE662M16
2SC5704
M16
TYP
MAX
200
200
100
DC
I
EBO
h
FE
f
T
MSG
|S
21E
|
2
NF
P
1dB
IP
3
Cre
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MSG = S
21
S
12
RF
CEL [ CALIFORNIA EASTERN LABS ]
