NE681 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
NE68100
00 (CHIP)
NE68118
2SC5012
18
NE68119
2SC5007
19
NE68130
2SC4227
30
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
fT
Gain Bandwidth Product at
VCE = 8 V, IC = 20 mA
VCE = 3 V, IC = 7 mA
GHz
GHz
9.0
9.0
1.2
14
7.0
7.0
NF
GNF
Noise Figure at VCE = 8 V, IC = 7 mA,
f = 1 GHz
f = 2 GHz
dB
dB
2.5
1.4
1.8
1.5
1.6
1.6
12
2.3
Associated Gain at VCE = 8 V, IC = 7 mA,
f = 1 GHz
f = 2 GHz
dB
dB
14
10
13.5
9
|S21E|2
hFE
Insertion Power Gain at
VCE = 8 V, IC = 20 mA, f = 1 GHz
f = 2 GHz
dB
dB
17
11
13
50
15
9
14
8
13
7.5
9
Forward Current Gain2 at
VCE = 8 V, IC = 20 mA
VCE = 3 V, IC = 7 mA
Collector Cutoff Current at
VCB = 10 V, IE = 0 mA
50 100 250
100 250
80
160
1.0
40
240
1.0
ICBO
IEBO
µA
µA
1.0
1.0
1.0
1.0
Emitter Cutoff Current at
VEB = 1 V, IC = 0 mA
1.0
1.0
3
CRE
Feedback Capacitance at
VCB = 3 V, IE = 0 mA, f = 1 MHz
VCB = 10 V, IE = 0 mA, f = 1 MHz
pF
pF
0.45 0.9
0.45 0.9
0.2
0.7
80
0.25 0.8
833
RTH (J-A)
PT
Thermal Resistance (Junction to Ambient) °C/W
Total Power Dissipation mW
1000
100
833
150
600
150
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
NE68133
2SC3583
33
NE68135
2SC3604
35
NE68139/39R
2SC4094
39
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
fT
Gain Bandwidth Product at VCE = 8 V, IC = 20 mA
VCE = 3 V, IC = 7 mA
GHz
GHz
9.0
9.0
1.6
12
9.0
NF
Noise Figure at VCE = 8 V, IC = 7 mA, f = 1 GHz
f = 2 GHz
dB
dB
1.2
2
1.2
2
2.3
GNF
Associated Gain at VCE = 8 V, IC = 7 mA,
f = 1 GHz
f = 2 GHz
dB
dB
13
13.5
|S21E|2
hFE
Insertion Power Gain at VCE = 8 V, IC = 20 mA,
f = 1 GHz
f = 2 GHz
dB
dB
11 12.5
7
15
8.5
9
11
2
Forward Current Gain at VCE= 8 V, IC = 20 mA
VCE = 3 V, IC = 7 mA
50
100 250
1.0
50
100 250
1.0
50 100 200
1.0
ICBO
IEBO
Collector Cutoff Current at VCB = 10 V, IE = 0 mA
µA
µA
Emitter Cutoff Current at VEB = 1 V, IC = 0 mA
1.0
1.0
1.0
3
CRE
Feedback Capacitance at
VCB = 10 V, IE = 0 mA, f = 1 MHz
pF
0.35 0.9
625
0.2
0.7
590
295
0.25 0.8
625
RTH (J-A)
PT
Thermal Resistance (Junction to Ambient)
Total Power Dissipation
°C/W
mW
200
200
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed (PW ≤ 350 ms, duty cycle ≤ 2 %).
3. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
CEL [ CALIFORNIA EASTERN LABS ]
