SILICON TRANSISTOR
NE681 SERIES
NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 8 GHz
• LOW NOISE FIGURE:
1.2 dB at 1 GHz
1.6 dB at 2 GHz
• HIGH ASSOCIATED GAIN:
15 dB at 1 GHz
12 dB at 2 GHz
• LOW COST
V
CE
= 3 V, I
C
= 5 mA
MSG
20
3.0
MAG
10
Associated Gain, Maximum Stable Gain
and Maximum Available Gain,
GA, MSG, MAG (dB)
ers
mb ot
T E: a r t n u e n
NO g p
ar
g n.
E
et
AS
in
esi
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ow tashe ew d
P
oll
n
f
a
for
DESCRIPTION
he thi s d
for ffice
T
ed
om mend ales o
fr
om call s
rec se
le a ls:
P
tai 35
de 81
E6
9R
N
813
E6
N
E
B
00 (CHIP)
35 (MICRO-X)
NEC's NE681 series of NPN epitaxial silicon transistors are
designed for low noise, high gain, low cost amplifier applica-
tions. Both the chip and micro-x versions are suitable for
amplifier applications up to 4 GHz. The NE681 die is also
available in six different low cost plastic surface mount pack-
age styles. NE681's unique device characteristics allow you to
use a single matching point to simultaneously achieve both low
noise and high gain.
18 (SOT 343 STYLE)
19 (3 PIN ULTRA
SUPER MINI MOLD)
NOISE FIGURE, GAIN MSG
AND MAG vs. FREQUENCY
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
Minimum Noise Figure, NF min (dB)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
2.0
NF
G
A
0
1.0
0.5
1.0
2.0
3.0
Frequency, f (GHz)
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 28, 2005