NPN SILICON TRANSISTOR NE685M03
FEATURES
•
NEW M03 PACKAGE:
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 12 GHz
LOW NOISE FIGURE:
NF = 1.5 dB at 2 GHz
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M03
1.2±0.05
0.8±0.1
2
•
•
TK
3
1.4 ±0.1
0.45
(0.9)
0.45
1
0.2±0.1
0.3±0.1
DESCRIPTION
The NEC's NE685M03 transistor is designed for low noise,
high gain, and low cost requirements. This high f
T
part is well
suited for very low voltage/low current designs for portable
wireless communications and cellular radio applications. NEC's
new low profile/flat lead style "M03" package is ideal for today's
portable wireless applications. The NE685 is also available in
six different low cost plastic surface mount package styles.
0.59±0.05
+0.1
0.15 -0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
EIAJ
1
REGISTERED
SYMBOLS
f
T
NF
|S
21E
|
2
h
FE2
I
CBO
I
EBO
C
RE3
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
GHz
dB
dB
µA
µA
pF
0.4
7
75
MIN
NE685M03
2SC5435
M03
TYP
12
1.5
9
140
0.1
0.1
0.7
2.5
MAX
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Forward Current Gain at V
CE
= 3 V, I
C
= 10 mA
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
