NEC'S SURFACE MOUNT NPN
SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• LOW COST
• SMALL AND ULTRA SMALL SIZE PACKAGES
• LOW VOLTAGE/LOW CURRENT OPERATION
• HIGH GAIN BANDWIDTH PRODUCT:
f
T
of 12 GHz
• NOISE FIGURES OF 1.5 dB AT 2.0 GHZ
NE685
SERIES
e rs
mb o t
:
TE art nu e n
NO g p
n.
ar
DESCRIPTION
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Pl e i l s :
ELECTRICAL CHARACTERISTICS
et a 539R
d
68
NE 8530
E6
N
33
685
NE
18 (SOT 343 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
NEC's family of high frequency, low cost, surface mount
devices are well suited for portable wireless communications
and cellular radio applications.
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
The NE685 series of high f
T
(12 GHz) devices is suitable for
very low voltage/low current, low noise applications. These
products are ideal for applications up to 2.4 GHz where low
cost, high gain, low voltage, and low current are prime con-
cerns.
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
(T
A
= 25°C)
EIAJ
2
REGISTERED
PART NUMBER
1
NUMBER
PACKAGE OUTLINE
NE68518
2SC5015
18
NE68519
2SC5010
19
NE68530
2SC4959
30
NE68533
2SC4955
33
NE68539/39R
2SC4957
39
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
f
T
Gain Bandwidth Product at
V
CE
= 3V, I
C
= 10 mA, f = 2.0 GHz
Minimum Noise Figure at
V
CE
= 3 V, I
C
= 3 mA, f = 2.0 GHz
Associated Gain at
V
CE
= 3V, I
C
= 3 mA, f = 2.0 GHz
Maximum Available Gain at
V
CE
= 3 V, I
C
= 10 mA, f = 2.0 GHz
Insertion Power Gain at
V
CE
= 3V, I
C
=10 mA, f = 2.0 GHz
Forward Current Gain
3
at
V
CE
= 3 V, I
C
= 10 mA
Collector Cutoff Current
at V
CB
= 5 V, I
E
= 0 mA
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
Feedback Capacitance at
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance
(Junction to Ambient)
GHz
dB
12
12
12
12
12
NF
MIN
G
NF
1.5
2.5
1.5
2.5
1.5
7
2.5
1.5
7
2.5
1.5
2.5
dB
8.5
12
7.5
11
7.5
11
MAG
|S
21E
|
2
h
FE
I
CBO
I
EBO
C
RE4
P
T
R
TH(J-A)
R
TH(J-C)
dB
dB
9
10
7
75
8.5
110 150
0.1
0.1
0.4
0.7
150
833
200
7
75
10.5
8
110 150
0.1
0.1
0.4
0.7
180
620
200
9
75
11
7
75
9
110 150
0.1
0.1
0.4
0.7
125
1000
200
10
110 150
0.1
0.1
0.3
0.5
180
620
200
75 110 150
μA
μA
pF
mW
°C/W
0.3
0.1
0.1
0.5
150
833
200
Thermal Resistance(Junction to Case)
°C/W
Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW≤350
μs,
duty cycle
≤2%.
4. The emitter terminal should be connected to the ground terminal
of the 3 terminal capacitance bridge.
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
