SURFACE MOUNT NPN SILICON
HIGH FREQUENCY TRANSISTOR
FEATURES
• LOW PHASE NOISE DISTORTION
• LOW NOISE:
1.5 dB at 2.0 GHz
• LOW VOLTAGE OPERATION
• LARGE ABSOLUTE MAXIMUM COLLECTOR
CURRENT:
I
C
MAX = 100 mA
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
• ALSO AVAILABLE IN CHIP FORM
18 (SOT 343 STYLE)
NE688
SERIES
19 (3 PIN ULTRA SUPER
MINI MOLD)
ers
mb ot
:
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CHARACTERISTICS
e d f o o f f
his d
ELECTRICAL
m t
f r o mm e n s a l e s
co
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eta 818
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NE 883 9
E6
9R
N
883
E6
N
NEC's NE688 series of NPN epitaxial silicon transistors are
designed for low cost amplifier and oscillator applications. Low
noise figures, high gain and high current capability equate to
wide dynamic range and excellent linearity. NE688's low
phase noise distortion and high fT make it an excellent choice
for oscillator applications up to 5 GHz. The NE688 series is
available in six different low cost plastic surface mount pack-
age styles, and in chip form.
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
(T
A
= 25°C)
EIAJ
2
REGISTERED
PART NUMBER
1
NUMBER
PACKAGE OUTLINE
NE68818
2SC5194
18
NE68819
2SC5195
19
NE68830
2SC5193
30
NE68833
2SC5191
33
f
T
f
T
NF
MIN
NF
MIN
|S
21E
|
|S
21E
|
h
FE
2
2
DESCRIPTION
NE68839/39R
2SC5192/92R
39
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
Gain Bandwidth Product at
V
CE
= 1V, I
C
= 3 mA, f = 2.0 GHz
Gain Bandwidth Product at
V
CE
= 3V, I
C
= 20 mA, f = 2.0 GHz
Minimum Noise Figure at
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
Minimum Noise Figure at
V
CE
= 3 V, I
C
= 7 mA, f = 2.0 GHz
Insertion Power Gain at
V
CE
= 1V, I
C
= 3 mA, f = 2.0 GHz
Insertion Power Gain at
V
CE
= 3V, I
C
= 20 mA, f = 2.0 GHz
Forward Current Gain
3
at
V
CE
= 1 V, I
C
= 3 mA
Collector Cutoff Current
at V
CB
= 5 V, I
E
= 0 mA
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
Feedback Capacitance at
V
CB
= 1 V, I
E
= 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance
(Junction to Ambient)
GHz
4
5
4.5
5
4
4.5
9
4
4.5
4
4.5
9
GHz
dB
10
9.5
8.5
1.7
2.5
1.7
2.5
1.7
2.5
1.7
2.5
1.7
2.5
dB
1.5
1.5
1.5
1.5
1.5
dB
3.0 4.0
3.0
4.0
8
2.5
3.5
2.5
3.5
4.0
4.5
9
dB
8.5
6.5
6.5
80
160
80
160
80
160
80
160
80
160
100
100
I
CBO
I
EBO
C
RE4
P
T
R
TH(J-A)
nA
nA
pF
mW
°C/W
100
100
0.65 0.8
150
833
0.7
100
100
0.8
125
1000
100
100
0.75 0.85
150
833
100
100
0.75 0.85
200
625
0.65 0.8
200
625
R
TH(J-C)
Thermal Resistance(Junction to Case)
°C/W
Notes:
1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW
≤
350
µs,
duty cycle
≤
2%.
4. The emitter terminal should be connected to the ground terminal of
the 3 terminal capacitance bridge.
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
