NEC's NPN SILICON TRANSISTOR NE851M13
FEATURES
•
NEW MINIATURE M13 PACKAGE:
– Small transistor outline
– 1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
IDEAL FOR
≤
3 GHz OSCILLATORS
LOW PHASE NOISE
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M13
0.7±0.05
0.5
+0.1
ñ0.05
0.15
+0.1
ñ0.05
(Bottom View)
0.3
0.35
•
•
2
1.0
+0.1
ñ0.05
0.7
LOW PUSHING FACTOR
3
0.35
1
DESCRIPTION
NEC's NE851M13 transistor is designed for oscillator applica-
tions up to 3 GHz. The NE851M13 features low voltage
operation, low phase noise, and high immunty to pushing
effects. NEC's new low profile/flat lead style "M13" package is
ideal for today's portable wireless applications.
0.15
+0.1
ñ0.05
0.1
0.1
0.2
0.2
0.125
+0.1
ñ0.05
0.2
+0.1
ñ0.05
•
E7
0.5±0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
f
T
f
T
|S
21E
|
2
|S
21E
|
2
NF
C
RE
I
CBO
I
EBO
h
FE
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Gain Bandwidth
at V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Insertion Power Gain
at V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
Noise Figure at V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Reverse Transfer Capacitance
3
at V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
2
at V
CE
= 1 V, I
C
= 5 mA
UNITS
GHz
GHz
dB
dB
dB
pF
nA
nA
MIN
3.0
5.0
3.0
4.5
–
–
–
–
100
NE851M13
2SC5801
M13
TYP
4.5
6.5
4.0
5.5
1.9
0.6
–
–
120
MAX
–
–
–
2.5
0.8
600
600
145
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
3. Collector to base capacitance when the emitter is grounded
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
