NE851M03
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
2
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
9.0
5.5
1.5
100
200
150
-65 to +150
ORDERING INFORMATION
PART NUMBER
QUANTITY
NE851M03-T1-A
3 k pcs./reel
T
J
T
STG
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm
2
X 1.0 mm (t) glass epoxy
board.
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Reverse Transfer Capacitance, C
re
(pF)
300
REVERSE TRANSFR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
1.0
f = 1 MHz
Total Power Dissipation, P
tot
(mW)
250
Mounted on Glass Epoxy PCB
(1.08 cm
2
x 1.0 mm(t) )
0.8
200
0.6
150
100
0.4
50
0.2
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
Ambient Temperature, T
A
(°C)
Collector to Base Voltage, V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
V
CE
= 1 V
400
µ
A
360
µ
A
320
µ
A
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
80
50
40
30
280
µ
A
60
240
µ
A
200
µ
A
40
20
160
µ
A
120
µ
A
20
10
80
µ
A
0
I
B
= 40
µ
A
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
6
7
Base to Emitter Voltage, V
BE
(V)
Collector to Emitter Voltage, V
CE
(V)
CEL [ CALIFORNIA EASTERN LABS ]
