NPN EPITAXIAL SILICON
TRANSISTOR HIGH FREQUENCY
LOW DISTORTION AMPLIFIER
FEATURES
•
•
•
•
HIGH COLLECTOR CURRENT:
100 mA MAX
NEW HIGH GAIN POWER MINI-MOLD PACKAGE
(SOT-89 TYPE)
HIGH OUTPUT POWER AT 1 dB COMPRESSION:
22 dBm TYP at 1 GHz
HIGH IP
3
:
32 dBm TYP at 1 GHz
NE856M02
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M02
BOTTOM VIEW
4.5±0.1
1.6±0.2
1.5±0.1
NEC's NE856M02 is an NPN silicon epitaxial bipolar transistor
designed for medium power applications requiring high dy-
namic range and low intermodulation distortion. This device
offers excellent performance and reliability at low cost through
NEC's titanium, platinum, gold metallization system and direct
nitride passivation of the surface of the chip. The NE856M02
is an excellent choice for low noise amplifiers in the VHF to UHF
band and is suitable for CATV and other telecommunication
applications.
0.8
MIN
DESCRIPTION
E
B
E
0.42
±0.06
1.5
3.0
0.45
±0.06
0.42
±0.06
3.95±0.26
C
2.45±0.1
0.25±0.02
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE2
f
T
C
RE3
|S
21E
|
2
NF
1
NF
2
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain at V
CE
= 10 V, I
C
= 20 mA
Gain Bandwidth Product at V
CE
= 10 V, I
C
= 20 mA
Feed-back Capacitance at V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain at V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
Noise Figure 1 at V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
Noise Figure 2 at V
CE
= 10 V, I
C
= 40 mA, f = 1 GHz
GHz
pF
dB
dB
dB
UNITS
µA
µA
50
120
6.5
0.5
12.0
1.1
1.8
3.0
0.8
MIN
NE856M02
2SC5336
M02
TYP
MAX
1.0
1.0
250
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
3.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
