NPN SILICON TRANSISTOR NE856M03
FEATURES
•
NEW M03 PACKAGE:
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
LOW NOISE FIGURE:
NF = 1.4 dB at 1 GHz
HIGH COLLECTOR CURRENT:
I
CMAX
= 100 mA
1.4 ±0.1
0.45
(0.9)
0.45
1
0.2±0.1
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M03
1.2±0.05
0.8±0.1
2
•
•
TC
3
0.3±0.1
DESCRIPTION
NEC's NE856M03 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/flat lead style "M03" package
is ideal for today's portable wireless applications. The NE856
is also available in chip, Micro-x, and eight different low cost
plastic surface mount package styles.
0.59±0.05
+0.1
0.15 -0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
EIAJ
1
REGISTERED
SYMBOLS
f
T
NF
|S
21E
|
2
h
FE2
I
CBO
I
EBO
C
RE3
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
GHz
dB
dB
µA
µA
pF
0.7
7.0
80
MIN
3.0
NE856M03
2SC5432
M03
TYP
4.5
1.4
10.0
145
1.0
1.0
1.5
2.5
MAX
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Forward Current Gain at V
CE
= 3 V, I
C
= 7 mA
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
