NPN SILICON RF TRANSISTOR
NE856 SERIES
NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
•
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 7 GHz
E
•
LOW NOISE FIGURE:
1.1 dB at 1 GHz
•
HIGH COLLECTOR CURRENT:
100 mA
•
HIGH RELIABILITY METALLIZATION
•
LOW COST
00 (CHIP)
V
CC
= 10 V, I
C
7 mA
MSG
4.0
20
Noise Figure, NF (dB)
3.5
3.0
2.5
G
A
15
MAG
10
Maximum Associated Gain, Maximum Stable Gain,
Associated Gain, MAG, MSG, G
A
(dB)
ers
mb o t
:
DESCRIPTION
TE art nu e n
NO g p
r
n.
SE
n
et a desig
L E A ol l o w i t a s h e e w
P
n
f
a
fo r
he this d
for ffice
T
ded es o
rom men sal
f
com call
re
a se
Ple ils:
e t a 63 5
d
85
NE 5639R
NE 8
NEC's NE856 series of NPN epitaxial silicon transistors is
designed for low cost amplifier and oscillator applications. Low
noise figures, high gain, and high current capability equate to
wide dynamic range and excellent linearity. The NE856 series
offers excellent performance and reliability at low cost. This is
achieved by NEC's titanium/platinum/gold metallization sys-
tem and their direct nitride passivated base surface process.
The NE856 series is available in chip form and a Micro-x
package for high frequency applications. It is also available in
several low cost plastic package styles.
32 (TO-92)
34 (SOT 89 STYLE)
18 (SOT 343 STYLE)
NE85600
NOISE FIGURE AND GAIN
vs. FREQUENCY
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
5
B
35 (MICRO-X)
19 (3 PIN ULTRA SUPER
MINI MOLD)
NF
MIN
2.0
1.5
1.0
0.4 0.5
1.0
2
3
4
5
Frequency, f (GHz)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 28, 2005
CEL [ CALIFORNIA EASTERN LABS ]
