NPN SiGe RF TRANSISTOR
NESG2030M04
NPN SiGe HIGH FREQUENCY TRANSISTOR
FEATURES
•
•
•
•
SiGe TECHNOLOGY:
f
T
= 60 GHz Process
LOW NOISE FIGURE:
NF = 0.9 dBm at 2 GHz
HIGH MAXIMUM STABLE GAIN:
MSG = 20 dB at 2 GHz
NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
M04
DESCRIPTION
NEC's NESG2030M04 is fabricated using NEC's state-of-the-art SiGe, wafer process. With a typical transition frequency of
60 GHz the NESG2030M04 is usable in applications from 100 MHz to over 10 GHz. Maximum DC current input of 35 mA provides
a device with a usable current range of 250
μA
to 25 mA. The NESG2030M04 provides excellent low voltage/low current performance.
NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NESG2030M04 is an ideal
choice for LNA and oscillator requirements in all mobile communication systems.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 0.5 V, I
C
= 0
DC Current Gain
2
at V
CE
= 2 V, I
C
= 5 mA
Reverse Transfer Capacitance
3
at V
CB
= 2 V, I
E
= 0 mA, f = 1 GHz
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz, Z
IN
= Z
OPT
Associated Gain at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz, Z
S
= Z
OPT
Maximum Stable Gain
4
at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Output Power at 1 dB compression point
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Third Order Intercept Point, V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
pF
dB
GHz
dB
dB
dBm
dBm
18
16
UNITS
nA
nA
200
0.17
0.9
16
20
18
12
22
MIN
NESG2030M04
2SC5761
M04
TYP
MAX
200
200
400
0.22
1.1
DC
I
EBO
h
FE
C
re
NF
G
a
MSG
RF
|S
21E
|
2
P
1dB
OIP
3
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
μs,
duty cycle
≤
2 %.
3. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
4. MSG = S
21
S
12
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 22, 2005
CEL [ CALIFORNIA EASTERN LABS ]
