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NESG2031M05 参数 Datasheet PDF下载

NESG2031M05图片预览
型号: NESG2031M05
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗高频三极管 [NPN SiGe HIGH FREQUENCY TRANSISTOR]
分类和应用:
文件页数/大小: 13 页 / 788 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NESG2031M05  
TYPICAL PERFORMANCE CURVES (TA= 25ºC)  
GAIN BANDWIDTH PRODUCT  
vs. COLLECTOR CURRENT  
GAIN BANDWIDTH PRODUCT  
vs. COLLECTOR CURRENT  
35  
35  
30  
25  
20  
15  
10  
V
CE = 2 V  
V
CE = 3 V  
f = 2 GHz  
f = 2 GHz  
30  
25  
20  
15  
10  
5
5
0
0
1
10  
100  
1
10  
100  
Collector Current, lC (mA)  
Collector Current, lC (mA)  
INSERTION POWER GAIN, MAG,  
MSG vs. FREQUENCY  
INSERTION POWER GAIN, MAG, MSG  
vs. FREQUENCY  
40  
35  
30  
25  
20  
15  
40  
35  
30  
25  
20  
15  
V
CE = 2 V  
V
CE = 1 V  
IC = 20 mA  
IC = 20 mA  
MSG  
MSG  
MAG  
MAG  
2
2
|S21e|  
|S21e|  
10  
5
10  
5
0
0
0.1  
1
10  
100  
0.1  
1
10  
100  
Frequency, f (GHz)  
Frequency, f (GHz)  
INSERTION POWER GAIN, MAG, MSG  
vs. COLLECTOR CURRENT  
INSERTION POWER GAIN, MAG, MSG  
vs. FREQUENCY  
40  
35  
30  
25  
20  
15  
30  
25  
20  
15  
10  
V
CE = 3 V  
VCE = 1 V  
IC = 20 mA  
f = 1 GHz  
MSG  
MAG  
MSG  
MAG  
2
|
|S21e  
2
|
|S21e  
10  
5
5
0
0
0.1  
1
10  
100  
1
10  
100  
Frequency, f (GHz)  
Collector Current, IC (mA)