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NESG2031M05-T1 参数 Datasheet PDF下载

NESG2031M05-T1图片预览
型号: NESG2031M05-T1
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗高频三极管 [NPN SiGe HIGH FREQUENCY TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 13 页 / 788 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NESG2031M05
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
FEATURES
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
V
CEO
= 5 V (Absolute Maximum)
LOW NOISE FIGURE:
NF = 0.8 dBm at 2 GHz
NF = 1.3 dBm at 5.2 GHz
HIGH MAXIMUM STABLE GAIN:
MSG = 21.5 dB at 2 GHz
LOW PROFILE M05 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
Pb Free Available (-A)
NPN SiGe RF TRANSISTOR
M05
NEC's NESG2031M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide
range of applications including low noise amplifiers, medium power amplifiers, and oscillators.
NECʼs low profile, flat lead style M05 Package provides high frequency performance for compact wireless designs.
DESCRIPTION
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
G
a
NF
G
a
RF
MSG
|S
21E
|
2
P
1dB
OIP
3
f
T
C
re
I
CBO
DC
I
EBO
h
FE
Notes:
1. MSG = S
21
S
12
2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
3. Pulsed measurement, pulse width
350
μs,
duty cycle
2 %.
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 22, 2005
NESG2031M05
M05
UNITS
dB
dB
dB
dB
dB
dB
dBm
dBm
GHz
pF
nA
nA
130
190
20
15.0
19.0
16.0
MIN
TYP
1.3
10.0
0.8
17.0
21.5
18.0
13
23
25
0.15
0.25
100
100
260
1.1
MAX
PARAMETERS AND CONDITIONS
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Associated Gain at V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Associated Gain at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Maximum Stable Gain
1
at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Output Power at 1dB Compression Point at
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Output 3rd Order Intercept Point at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Gain Bandwidth Product at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Reverse Transfer Capacitance at V
CB
= 2 V, I
C
= 0 mA, f = 1 GHz
2
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
3
at V
CE
= 2 V, I
C
= 5 mA