NEC's NPN SiGe
NESG2031M16
HIGH FREQUENCY TRANSISTOR
FEATURES
•
•
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
V
CEO
= 5 V (Absolute Maximum)
LOW NOISE FIGURE:
NF = 0.8 dBm at 2 GHz
NF = 1.3 dBm at 5.2 GHz
HIGH MAXIMUM STABLE GAIN:
MSG = 21.5 dB at 2 GHz
LOW PROFILE M16 PACKAGE:
6-pin lead-less minimold
M16
•
•
DESCRIPTION
NEC's NESG2031M16 is fabricated using NECʼs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
G
a
NF
G
a
RF
MSG
|S
21E
|
P
1dB
OIP
3
f
T
C
re
I
CBO
DC
I
EBO
h
FE
Notes:
1. MSG = S
21
S
12
2. Collector to base capacitance when the emitter pin is grounded.
3. Pulsed measurement, pulse width
≤
350
μs,
duty cycle
≤
2 %.
2
NESG2031M16
M16
UNITS
dB
dB
dB
dB
dB
dB
dBm
15.0
19.0
16.0
MIN
TYP
1.3
10.0
0.8
17.0
21.5
18.0
13
23
20
25
0.15
0.25
100
100
130
190
260
1.1
MAX
PARAMETERS AND CONDITIONS
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Associated Gain at V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Associated Gain at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Maximum Stable Gain
1
at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Output Power at 1dB Compression Point at
V
CE
= 3 V, I
CQ
= 20 mA, f = 2 GHz
Gain Bandwidth Product at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Reverse Transfer Capacitance
2
at V
CB
= 2 V, I
E
= 0 mA, f = 1 GHz
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain at V
CE
= 2 V, I
C
= 5 mA
3
Output 3rd Order Intercept Point at V
CE
= 3 V, I
CQ
= 20 mA, f = 2 GHz dBm
GHz
pF
nA
nA
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
