PRELIMINARY DATA SHEET
NEC's NPN SiGe TRANSISTOR NESG204619
FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
FEATURES
•
•
•
IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS:
NF = 0.8 dB TYP., G
a
= 11.0 dB TYP. @ V
CE
= 1 V, I
C
= 3 mA, F = 2 GHZ
HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS:
V
CEO
(ABSOLUTE MAXIMUM RATINGS) = 5.0 V
3-PIN SUPER MINIMOLD (19) PACKAGE
ORDERING INFORMATION
PART NUMBER
NESG204619-A
NESG204619-T1-A
QUANTITY
50 pcs (Non reel)
3 kpcs/reel
SUPPLYING FORM
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS
(T
A
=+25ºC)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
T
j
T
stg
RATINGS
13
5
1.5
40
200
150
−65
to +150
UNIT
V
V
V
mA
mW
°C
°C
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PCB
Caution
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
