NEC's NPN SiGe
NESG2101M05
HIGH FREQUENCY TRANSISTOR
FEATURES
•
•
•
•
•
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
V
CEO
= 5 V (Absolute Maximum)
HIGH OUTPUT POWER:
P
1dB
= 21 dBm at 2 GHz
LOW NOISE FIGURE:
NF = 0.9 dB at 2 GHz
HIGH MAXIMUM STABLE POWER GAIN:
MSG = 17 dB at 2 GHz
LOW PROFILE M05 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
M05
DESCRIPTION
NEC's NESG2101M05 is fabricated using NECʼs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators
NECʼs low profile, flat lead style M05 Package provides high
frequency performance for compact wireless designs.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
P
1dB
G
L
NF
G
a
NF
G
a
MSG
|S
21E
|
2
f
T
C
re
I
CBO
DC
I
EBO
h
FE
Notes:
RF
PARAMETERS AND CONDITIONS
Output Power at 1 dB Compression Point
V
CE
= 3.6 V, I
CQ
= 10 mA, f = 2 GHz
Linear Gain, V
CE
= 3.6 V, I
CQ
= 10 mA, f = 2 GHz
Noise Figure at V
CE
= 2 V, I
C
= 10 mA, f = 2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Associated Gain at V
CE
= 2 V, I
C
= 10 mA, f = 2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Noise Figure at V
CE
= 2 V, I
C
= 7mA, f = 1 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Associated Gain at V
CE
= 2 V, I
C
= 7 mA, f = 1 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Maximum Stable Gain
1
at V
CE
= 3 V, I
C
= 50 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 50 mA, f = 2 GHz
Gain Bandwidth Product at V
CE
= 3 V, I
C
= 50 mA, f = 2 GHz
Reverse Transfer Capacitance
2
at V
CB
= 2 V, I
C
= 0 mA, f = 1 MHz
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain at V
CE
= 2 V, I
C
= 15 mA
3
NESG2101M05
M05
UNITS
dBm
dB
dB
dB
dB
dB
dB
dB
GHz
pF
nA
nA
130
190
14.5
11.5
14
11.0
MIN
TYP
21
15
0.9
13.0
0.6
19.0
17.0
13.5
17
0.4
0.5
100
100
260
1.2
MAX
1. MSG = S
21
S
12
2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
3. Pulsed measurement, pulse width
≤
350
μs,
duty cycle
≤
2 %.
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
