NEC's NPN SiGe RF TRANSISTOR
FOR MEDIUM OUTPUT POWER NESG250134
AMPLIFICATION (800 mW)
3-PIN POWER MINIMOLD (34 PACKAGE)
FEATURES
•
THIS PRODUCT IS SUITABLE FOR
MEDIUM OUTPUT POWER (800 mW) AMPLIFICATION
P
O
= 29 dBm TYP. @ V
CE
= 3.6 V, P
in
= 15 dBm, f = 460 MHz
P
O
= 29 dBm TYP. @ V
CE
= 3.6 V, P
in
= 20 dBm, f = 900 MHz
MAXIMUM STABLE GAIN:
MSG = 23 dB TYP @ V
CE
= 3.6 V, I
C
= 100 mA, f = 460 MHz
SiGe TECHNOLOGY:
UHS2-HV process
ABSOLUTE MAXIMUM RATINGS:
V
CBO
= 20 V
3-PIN POWER MINIMOLD (34 PACKAGE)
•
•
•
•
ORDERING INFORMATION
PART NUMBER
NESG250134-AZ
NESG250134-T1-AZ
ORDER NUMBER
NESG250134-AZ
NESG250134-T1-AZ
PACKAGE
3-pin power minimold
(Pb-Free)
Note1
QUANTITY
25 pcs (Non reel)
1 kpcs/reel
SUPPLYING FORM
• 12 mm wide embossed taping
• Pin 2 (Emitter) face the perforation side of the tape
Note
1. Contains lead in the part except the electrode terminals.
Remark
To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS
(T
A
=+25ºC)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
T
j
T
stg
RATINGS
20
9.2
2.8
500
1.5
150
−65
to +150
UNIT
V
V
V
mA
W
°C
°C
Note
Mounted on 34.2 cm
2
×
0.8 mm (t) glass epoxy PWB
Caution
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories