NESG260234
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
30
MSG
MSG
MAG
MAG
25
20
15
10
5
25
20
15
10
5
2
2
|S21e
|
|S21e
|
V
CE = 7 V
V
CE = 6 V
f = 460 MHz
f = 460 MHz
0
0
10
100
Collector Current I
1 000
10
100
Collector Current I
1 000
C
(mA)
C
(mA)
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
η
η
35
30
25
20
15
10
500
400
300
200
100
0
35
30
25
20
15
10
500
V
CE = 4.5 V, f = 460 MHz
V
CE = 6 V, f = 460 MHz
I
C (set) = 30 mA
I
C (set) = 30 mA
400
300
200
100
0
P
out
P
out
G
P
G
P
I
C
I
C
η
C
η
C
–5
0
5
10
15
20
–5
0
5
10
15
20
Input Power Pin (dBm)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
7
Data Sheet PU10547EJ02V0DS
CEL [ CALIFORNIA EASTERN LABS ]
