NPN SILICON GERMANIUM RF TRANSISTOR
NESG260234
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (1 W)
3-PIN POWER MINIMOLD (34 PKG)
FEATURES
• This product is suitable for medium output power (1 W) amplification
P
out
= 30 dBm TYP. @ V
CE
= 6 V, P
in
= 15 dBm, f = 460 MHz
P
out
= 30 dBm TYP. @ V
CE
= 6 V, P
in
= 20 dBm, f = 900 MHz
• MSG (Maximum Stable Gain) = 23 dB TYP. @ V
CE
= 6 V, Ic = 100 mA, f = 460 MHz
• Using UHS2-HV process (SiGe technology), V
CBO
(ABSOLUTE MAXIMUM RATINGS) = 25 V
• 3-pin power minimold (34 PKG)
ORDERING INFORMATION
Part Number
NESG260234
Order Number
NESG260234-AZ
Package
3-pin power minimold
(Pb-Free)
NESG260234-T1
NESG260234-T1-AZ
Note1, 2
Quantity
25 pcs
(Non reel)
1 kpcs/reel
• Magazine case
Supplying Form
• 12 mm wide embossed taping
• Pin 2 (Emitter) face the perforation side of the tape
Notes 1.
Contains Lead in the part except the electrode terminals.
2.
With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark
To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
2
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
25
9.2
2.8
600
1.9
150
−65
to +150
Unit
V
V
V
mA
W
°C
°C
T
j
T
stg
Note
Mounted on 34.2 cm
×
0.8 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10547EJ02V0DS (2nd edition)
Date Published May 2005 CP(K)
The mark
shows major revised points.
CEL [ CALIFORNIA EASTERN LABS ]
