NPN SILICON GERMANIUM RF TRANSISTOR
NESG3031M05
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP., G
a
= 16.0 dB TYP. @ V
CE
= 2 V, I
C
= 6 mA, f = 2.4 GHz
NF = 0.95 dB TYP., G
a
= 10.0 dB TYP. @ V
CE
= 2 V, I
C
= 6 mA, f = 5.2 GHz
NF = 1.1 dB TYP., G
a
= 9.5 dB TYP. @ V
CE
= 2 V, I
C
= 6 mA, f = 5.8 GHz
• Maximum stable power gain: MSG = 14.0 dB TYP. @ V
CE
= 3 V, I
C
= 20 mA, f = 5.8 GHz
• SiGe HBT technology (UHS3) adopted: f
max
= 110 GHz
• Flat-lead 4-pin thin-type super minimold (M05, 2012 PKG)
ORDERING INFORMATION
Part Number
NESG3031M05
Order Number
NESG3031M05-A
Package
Flat-lead 4-pin thin-type super
minimold (M05, 2012 PKG)
NESG3031M05-T1 NESG3031M05-T1-A
(Pb-Free)
Note
Quantity
50 pcs
(Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Collector), Pin 4 (Emitter) face the
perforation side of the tape
Note
With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark
To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
2
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
12.0
4.3
1.5
35
150
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10414EJ03V0DS (3rd edition)
Date Published November 2005 CP(K)
The mark
shows major revised points.
CEL [ CALIFORNIA EASTERN LABS ]
