DATASHEET
NEC's NPN SiGe
NESG3031M14
HIGH FREQUENCY TRANSISTOR
FEATURES
• THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE,
HIGH-GAIN AMPLIFICATION:
NF = 0.95 dB TYP., G
a
= 10.0 dB TYP. @ V
CE
= 2 V, I
C
= 6 mA, f = 5.2 GHz
NF = 1.1 dB TYP., G
a
= 9.5 dB TYP. @ V
CE
= 2 V, I
C
= 6 mA, f = 5.8 GHz
• MAXIMUM STABLE POWER GAIN:
MSG = 15.0 dB TYP. @ V
CE
= 3 V, I
C
= 20 mA, f = 5.8 GHz
• SiGe HBT TECHNOLOGY (UHS3) ADOPTED:
f
max
= 110 GHz
• M14 PACKAGE:
4-pin lead-less minimold package
M14 Package
ORDERING INFORMATION
PART NUMBER
NESG3031M14-A
NESG3031M14-T3-A
QUANTITY
50 pcs (Non reel)
10 kpcs/reel
SUPPLYING FORM
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 4 (Emitter) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS
(T
A
= +25ºC)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
T
j
T
stg
RATINGS
12.0
4.3
1.5
35
150
150
−65
to +150
UNIT
V
V
V
mA
mW
°C
°C
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PWB
Caution
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
California Eastern Laboratories
1
CEL [ CALIFORNIA EASTERN LABS ]
