PS2521-1,PS2521L-1
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
150
250
Diode Power Dissipation P
D
(mW)
200
100
150
2.5 mW/˚C
100
1.5 mW/˚C
50
50
0
25
50
75
100
125
0
25
50
75
100
125
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
(˚C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
Collector Current I
C
(mA)
Forward Current I
F
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
70
10
T
A
= +100 ˚C
+75 ˚C
+50 ˚C
60
50
40
30
20
10
A
0m
A
=5
0m
I
F
2
mA
10
1
+25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
5 mA
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
2
4
6
8
10
Forward Voltage V
F
(V)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
50
I
F
= 50 mA
Collector Current I
C
(mA)
20 mA
10 mA
10 000
1 000
10
5
1
0.5
0.1
0.05
0.01
0.0
100
V
CE
= 80 V
40 V
24 V
10 V
5V
5 mA
2 mA
1 mA
10
1
0.1
–60 –40
–20
0
20
40
60
80
100
0.2
0.4
0.6
0.8
1.0
Ambient Temperature T
A
(˚C)
Collector Saturation Voltage V
CE (sat)
(V)
Remark
The graphs indicate nominal characteristics.
6
Data Sheet PN10230EJ02V0DS
CEL [ CALIFORNIA EASTERN LABS ]
