PS2532-1,-2,-4,PS2532L-1,-2,-4
TYPICAL CHARACTERISTICS (T
A
= 25
°C,
unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation P
C
(mW)
150
400
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Diode Power Dissipation P
D
(mW)
100
PS2532-2, -4
PS2532L-2, -4
50
PS2532-1
PS2532L-1
1.5 mW/˚C
300
PS2532-1
PS2532L-1
200
PS2532-2, -4
PS2532L-2, -4
100
2.4 mW/˚C
3.0 mW/˚C
1.2 mW/˚C
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
(˚C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
T
A
= +100 ˚C
+75 ˚C
+50 ˚C
+25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
160
140
4.5 mA
mA
5.0
.0 mA
4 mA
3.5
mA
3.0
10
Collector Current I
C
(mA)
Forward Current I
F
(mA)
120
100
80
60
40
20
1
mA
2.5
A
2.0 m
1.5 mA
1.0 mA
0.1
I
F
= 0.5 mA
1
2
3
4
5
6
7
8
0.01
0.6
0.8
1.0
1.2
1.4
1.6
0
Forward Voltage V
F
(V)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(A)
10
µ
1
µ
100 n
10 n
1n
100 p
–50
–25
0
25
50
75
100
V
CE
= 300 V
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
500
100
50
10
5
1
0.5
0.1
0.0
mA
I
F
= 5.0
A
2.0 m
1.0 mA
0.5 mA
Collector Current I
C
(mA)
0.2
0.4
0.6
0.8
1.0
1.2
Ambient Temperature T
A
(˚C)
Collector Saturation Voltage V
CE(sat)
(V)
Data Sheet PN10232EJ01V0DS
9
CEL [ CALIFORNIA EASTERN LABS ]
