PS2566-1,-2,-4,PS2566L-1,-2,-4,PS2566L1-1,-2,-4,PS2566L2-1,-2,-4
TYPICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
150
Diode Power Dissipation P
D
(mW)
100
PS2566-2,-4
PS2566-1
1.5 mW/˚C
150
PS2566-2,-4
PS2566-1
2 mW/˚C
100
1.6 mW/˚C
50
1.2 mW/˚C
50
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
(˚C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
50
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
80
60
Forward Current I
F
(mA)
T
A
= +100˚C
+60˚C
+25˚C
40
20
0
–20
10
5
1
0.5
0˚C
–25˚C
–55˚C
–40
–60
0.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
–80
–1.5
–1.0
–0.5
0
0.5
1.0
1.5
Forward Voltage V
F
(V)
Forward Voltage V
F
(V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
200
10 mA
5 mA
1 mA
10 000
Collector Current I
C
(mA)
100
V
CE
= 2 V
5V
10 V
24 V
40 V
50
1000
10
5
0.5 mA
100
10
0.2 mA
1
0.5
0.2
0.4
I
F
= 0.1 mA
1
–50
–25
0
25
50
75
100
0.6
0.8
1.0
1.2
1.4
1.6
Ambient Temperature T
A
(˚C)
Collector Saturation Voltage V
CE(sat)
(V)
Remark
The graphs indicate nominal characteristics.
Data Sheet PN10237EJ02V0DS
12
CEL [ CALIFORNIA EASTERN LABS ]
