PS2801-1,PS2801-4
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= 25°C)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation P
C
(mW)
100
200
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Diode Power Dissipation P
D
(mW)
75
PS2801-4
150
50
PS2801-1
0.6 mW/˚C
0.8 mW/˚C
100
PS2801-1
PS2801-4
1.2 mW/˚C
25
50
0
25
50
75
100
0
25
50
75
100
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
( ˚C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
50
T
A
= +100˚C
+60˚C
+25˚C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
70
60
Collector Current I
C
(mA)
Forward Current I
F
(mA)
10
5
50
40
30
20
10
1
0.5
0˚C
–25˚C
–55˚C
A
0m
A
5
m
20
mA
10
I
F
= 5 mA
0.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
0
2
4
6
8
10
Forward Voltage V
F
(V)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
10 000
V
CE
= 80 V
40 V
24 V
10 V
5V
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
40
50 mA
20 mA
Collector Current I
C
(mA)
10
5
1 000
10 mA
5 mA
2 mA
I
F
= 1 mA
100
1
0.5
10
1
0.1
–50
–25
0
25
50
75
100
0
0.2
0.4
0.6
0.8
1.0
Ambient Temperature T
A
(˚C)
Collector Saturation Voltage V
CE(sat)
(V)
Remark
The graphs indicate nominal characteristics.
6
Data Sheet PN10251EJ02V0DS
CEL [ CALIFORNIA EASTERN LABS ]
