PS2815-1,PS2815-4
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= 25°C)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
140
120
100
80
60
40
20
0
25
50
75
100
125
80
Diode Power Dissipation P
D
(mW)
60
PS2815-4
0.7 mW/˚C
40
PS2815-1
0.6 mW/˚C
20
0
25
50
75
100
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
(˚C)
FORWARD CURRENT vs.
AMBIENT TEMPERATURE
100
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
I
F
= 20 mA
10 mA
10
T
A
= +100˚C
+60˚C
+25˚C
Collector Current I
C
(mA)
Forward Current I
F
(mA)
20
15
5 mA
1
0˚C
–25˚C
–50˚C
10
2 mA
5
1 mA
0.5 mA
0.1
0.01
0.0
0.5
1.0
1.5
2.0
0
2
4
6
8
10
Ambient Temperature T
A
(˚C)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
100
10 mA
5 mA
2 mA
10
1 mA
1
I
F
= 0.5 mA
10 000
1 000
V
CE
= 20 V
40 V
100
10
1
–25
Collector Current I
C
(mA)
0
25
50
75
100
0.1
0.0
0.2
0.4
0.6
0.8
1.0
Ambient Temperature T
A
(˚C)
Collector Saturation Voltage V
CE(sat)
(V)
Remark
The graphs indicate nominal characteristics.
6
Data Sheet PN10256EJ02V0DS
CEL [ CALIFORNIA EASTERN LABS ]
