PS7160-2A,PS7160L-2A
ELECTRICAL CHARACTERISTICS (T
A
= 25
°C)
Parameter
Diode
Forward Voltage
Reverse Current
MOS FET
Off-state Leakage
Current
Output Capacitance
Coupled
LED On-state Current
On-state Resistance
C
out
I
Fon
R
on1
R
on2
Turn-on Time
Turn-off Time
*1
*1
Symbol
V
F
I
R
I
Loff
I
F
= 10 mA
V
R
= 5 V
V
D
= 600 V
Conditions
MIN.
TYP.
1.2
MAX.
1.4
5.0
Unit
V
µ
A
µ
A
0.03
1.0
V
D
= 0 V, f = 1 MHz
I
L
= 90 mA
I
F
= 10 mA, I
L
= 10 mA
I
F
= 10 mA, I
L
= 90 mA, t
≤
10 ms
I
F
= 10 mA, V
O
= 5 V, R
L
= 500
Ω,
PW
≥
10 ms
V
I-O
= 1.0 kV
DC
V = 0 V, f = 1 MHz
10
9
110
2.0
42
33
0.8
0.06
50
50
1.5
0.2
pF/ch
mA
Ω
t
on
t
off
R
I-O
C
I-O
ms
Isolation Resistance
Isolation Capacitance
Ω
1.1
pF/ch
*1
Test Circuit for Switching Time
I
F
Pulse Input
V
L
Input
50 %
0
V
O
= 5 V
Input monitor
V
O
monitor
Output
90 %
R
in
R
L
t
on
t
off
10 %
Data Sheet PN10290EJ01V1DS
5
CEL [ CALIFORNIA EASTERN LABS ]
