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UPA814T 参数 Datasheet PDF下载

UPA814T图片预览
型号: UPA814T
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅高频三极管 [NPN SILICON HIGH FREQUENCY TRANSISTOR]
分类和应用:
文件页数/大小: 4 页 / 159 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
SMALL PACKAGE STYLE:
2 NE688 Die in a 2 mm x 1.25 mm package
LOW NOISE FIGURE:
NF = 1.5 dB TYP at 2 GHz
HIGH GAIN BANDWIDTH:
f
T
= 9 GHz
HIGH COLLECTOR CURRENT:
100 mA
0.65
2.0
±
0.2
1.3
2
1
UPA814T
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE S06
2.1
±
0.1
1.25
±
0.1
6
0.2 (All Leads)
5
DESCRIPTION
NEC's UPA814T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
f
T
, low voltage bias and small size make this device suited for
various hand-held wireless applications.
3
4
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
1 Die
2 Die
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
mW
°C
°C
RATINGS
9
6
2
100
110
200
150
-65 to +150
0.9
±
0.1
0.7
0.15
- 0.05
0 ~ 0.1
+0.10
T
J
T
STG
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
Note:
Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE1
f
T
Cre
2
|S
21E
|
2
NF
h
FE1
/h
FE2
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain at V
CE
= 1 V, I
C
= 3 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Feedback Capacitance at V
CB
= 1 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
=20 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
h
FE
Ratio: h
FE1
= Smaller Value of Q
1
, or Q
2
h
FE2
= Larger Value of Q
1
or Q
2
GHz
pF
dB
dB
0.85
UNITS
µA
µA
80
110
9.0
0.75
6.5
1.5
0.85
MIN
UPA814T
S06
TYP
MAX
0.1
0.1
160
Notes: 1. Pulsed measurement, pulse width
350
µs,
duty cycle
2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA814T-T1, 3K per reel.
California Eastern Laboratories