5 V, SUPER MINIMOLD
WIDEBAND SI RFIC AMPLIFIER
FEATURES
• HIGH DENSITY SURFACE MOUNTING:
6 pin super minimold or SOT-363 package
• HIGH GAIN:
15 dB TYP
Gain, G
S
(dB)
T
A
= -40°C
UPC2708TB
GAIN vs.
FREQUENCYand TEMPERATURE
T
A
= +85°C
T
A
= +25°C
• SATURATED OUTPUT POWER:
+10 dBm
• WIDEBAND RESPONSE:
f
u
= 2.9 GHz TYP
• SUPPLY VOLTAGE:
V
CC
= 4.5 to 5.5 V
T
A
= +85°C
T
A
= -40°C
T
A
= +25°C
DESCRIPTION
NEc's UPC2708TB is a Silicon RFIC manufactured using the
NESAT III process. This device is suitable as buffer amplifier
for DBS, PCS and other communication receivers. The
UPC2708TB is pin compatible and has comparable perfor-
mance as the larger UPC2708T, so it is suitable for use as a
replacement to help reduce system size. The IC is housed in
a 6 pin super minimold or SOT-363 package.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°C,
f = 1 GHz, V
CC
= 5 V)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
G
S
f
U
∆G
S
P
SAT
P
1dB
NF
RL
IN
RL
OUT
ISOL
∆G
T
R
TH
PARAMETERS AND CONDITIONS
Circuit Current (no signal)
Small Signal Gain
Upper Limit Operating Frequency
(The gain at f
U
is 3 dB down from the gain at 0.1 GHz)
Gain Flatness, f = 0.1 - 2.6 GHz
Saturated Output Power
Output Power at 1 dB Compression Point
Noise Figure
Input Return Loss
Output Return Loss
Isolation
Gain-Temperature Coefficient
Thermal Resistance (Junction to Ambient)
UNITS
mA
dB
GHz
dB
dBm
dBm
dB
dB
dB
dB
dB/°C
°C/W
8
16
18
+7.5
MIN
20
13
2.7
UPC2708TB
S06
TYP
26
15
2.9
±0.8
+10
+7.5
6.5
11
20
23
+0.002
325
8
MAX
33
18.5
CEL [ CALIFORNIA EASTERN LABS ]
