BIPOLAR ANALOG INTEGRATED CIRCUITS
UPC2711TB, UPC2712TB
5 V, SUPER MINIMOLD
SILICON MMIC WIDEBAND AMPLIFIER
FEATURES
• HIGH DENSITY SURFACE MOUNTING:
6 pin super minimold or SOT- 363 package
25
TYPICAL PERFORMANCE CURVES
GAIN vs. FREQUENCY
UPC2712TB
• SUPPLY VOLTAGE:
V
CC
= 4.5 to 5.5 V
• WIDEBAND RESPONSE:
UPC2711TB: fu = 2.9 GHz TYP
UPC2712TB: fu = 2.6 GHz TYP
• POWER GAIN:
UPC2711TB: G
P
= 13 dB TYP
UPC2712TB: G
P
= 20 dB TYP
20
Gain, GP (dB)
15
UPC2711TB
10
DESCRIPTION
NEC's UPC2711TB and UPC2712TB are Silicon MMIC
Wideband Amplifiers manufactured using NEC's 20 GHz f
T
NESAT
TM
III silicon bipolar process. These devices are de-
signed for use as buffer amps in DBS tuners. The UPC2711/
12TB are pin compatible and have comparable performance
as the larger UPC2711/12T, so they are suitable for use as a
replacement to help reduce system size. These IC's are
housed in a 6 pin super minimold or SOT-363 package.
NEC's stringent quality assurance and test procedure ensure
the highest reliability and performance.
5
0.5
1.0
1.5
2.0
2.5
3.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= +25
°C,
V
CC
= 5.0 V, Z
L
= Z
S
= 50 W)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
G
P
f
U
∆G
P
P
O
(SAT)
NF
RL
IN
RL
OUT
ISOL
PARAMETERS AND CONDITIONS
Circuit Current (no signal)
Power Gain, f = 1 GHz
Upper Limit Operating Frequency
(The gain at f
U
is 3 dB down from the gain at 100 MHz)
Gain Flatness, f = 0.1 GHz to 2.5 GHz
Maximum Output Level, f = 1 GHz, P
IN
= 0 dBm
Noise Figure, f = 1 GHz
Input Return Loss, f = 1 GHz
Output Return Loss, f = 1 GHz
Isolation, f = 1 GHz
UNITS
mA
dB
GHz
dB
dBm
dB
dB
dB
dB
20
9
25
-2
MIN
9
11
2.7
UPC2711TB
S06
TYP
12
13
2.9
±0.8
+1
5
25
12
30
6.5
9
10
28
0
MAX
15
16.5
MIN
9
18
2.2
UPC2712TB
S06
TYP
12
20
2.6
±0.8
+3
4.5
12
13
33
6
MAX
15
23.5
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 22, 2005
CEL [ CALIFORNIA EASTERN LABS ]
