3 V, SUPER MINIMOLD
SI MMIC DOWNCONVERTER
FEATURES
• HIGH-DENSITY SURFACE MOUNTING:
6 pin super minimold or SOT-363 package
Conversion Gain (dB)
UPC2757TB
UPC2758TB
CONVERSION GAIN vs. LO FREQUENCY
25
V
CC
= 3 V,
LO Power = -5 dBm
RF Above LO
• WIDEBAND OPERATION:
RF = 0.1 GHz to 2.0 GHz
IF = 20 MHz to 300 MHz
• BUILT-IN POWER SAVE FUNCTION
• SUPPLY VOLTAGE:
V
CC
= 2.7 TO 3.3 V
200 MHz IF
20
UPC2758TB
400 MHz IF
UPC2757TB
15
DESCRIPTION
NEC's UPC2757TB and UPC2758TB are silicon RFICs manu-
factured using the NESAT™III process. The devices consist of
a mixer, an IF amplifier and an LO buffer amplifier. These
devices are suitable as 1st IF downconverters for the receiver
stage of cellular and other wireless systems. The UPC2757TB
is designed for low power consumption while the UPC2758TB
is designed for low distortion. The UPC2757TB/58TB are pin
compatible and have comparable performance to the larger
UPC2757T/58T, so they are suitable for use as a replacement
to help reduce system size. The IC is housed in a 6 pin super
minimold or SOT-363 package.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
10
5
0
500
1000
1500
2000
2500
LO Frequency (MHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, V
CC
= V
PS
= 3.0 V, P
LO
= -10 dBm)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
f
RF
PARAMETERS AND CONDITIONS
Circuit Current,
V
PS
= 3 V
V
PS
= 0.5 V
UNITS
mA
µA
MIN
3.7
UPC2757TB
S06
TYP
5.6
0.1
MAX
7.7
MIN
6.6
UPC2758TB
S06
TYP
11
0.1
MAX
14.8
RF Operating Frequency Range
(The conversion gain at f
RF
is not more than 3 dB down
from the gain at f
RF
= 800 MHz, f
IF
= 130 MHz)
IF Operating Frequency Range
(The conversion gain at f
IF
is not more than 3 dB down from
the gain at f
RF
= 800 MHz, f
IF
= 130 MHz)
Conversion Gain
1
, f
RF
= 800 MHz, f
IF
= 130 MHz
f
RF
= 2.0 GHz, f
IF
= 250 MHz
Noise Figure,
SSB
f
RF
= 800 MHz, f
IF
= 130 MHz
f
RF
= 2.0 GHz, f
IF
= 250 MHz
GHz
0.1
2.0
0.1
2.0
f
IF
MHz
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
°C/W
20
12
10
15
13
10
13
-11
-11
-3
-8
-8
+5
-35
-23
300
18
16
13
16
20
16
14
19
17
9
13
-7
-7
+1
-4
-3.5
+11
-30
-15
300
22
20
12
15
CG
NF
P
SAT
P
1dB
OIP
3
ISOL
R
TH (J-A)
Saturated Output Power
2
, f
RF
= 800 MHz, f
IF
= 100 MHz
f
RF
= 2.0 GHz, f
IF
= 250 MHz
Output Power at 1dB
f
RF
= 800 MHz
compression point
f
IF
= 100 MHz
Output 3rd Order Intercept Point, (SSB) P
LO
= -10 dBm
f
RF
= 0.8~2.0 GHz, f
IF
= 100 MHz
LO Leakage, f
LO
= 0.8 ~2.0 GHz
at RF pin
at IF pin
Thermal Resistance (Junction to Ambient)
Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB
2. P
RF
= -10 dBm.
325
325
Notes:
1. P
RF
= -40 dBm.
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
