欢迎访问ic37.com |
会员登录 免费注册
发布采购

UPC3225TB-E3-A 参数 Datasheet PDF下载

UPC3225TB-E3-A图片预览
型号: UPC3225TB-E3-A
PDF下载: 下载PDF文件 查看货源
内容描述: 双极模拟集成电路 [BIPOLAR ANALOG INTEGRATED CIRCUIT]
分类和应用:
文件页数/大小: 16 页 / 341 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号UPC3225TB-E3-A的Datasheet PDF文件第2页浏览型号UPC3225TB-E3-A的Datasheet PDF文件第3页浏览型号UPC3225TB-E3-A的Datasheet PDF文件第4页浏览型号UPC3225TB-E3-A的Datasheet PDF文件第5页浏览型号UPC3225TB-E3-A的Datasheet PDF文件第6页浏览型号UPC3225TB-E3-A的Datasheet PDF文件第7页浏览型号UPC3225TB-E3-A的Datasheet PDF文件第8页浏览型号UPC3225TB-E3-A的Datasheet PDF文件第9页  
BIPOLAR ANALOG INTEGRATED CIRCUIT
UPC3225TB
5 V, SILICON GERMANIUM MMIC
MEDIUM OUTPUT POWER AMPLIFIER
DESCRIPTION
The
PC3225TB is a silicon germanium (SiGe) monolithic integrated circuits designed as IF amplifier for DBS
tuners. This IC is manufactured using our 50 GHz f
max
UHS2 (Ultra High Speed Process) SiGe bipolar process.
FEATURES
Wideband response
Low current
Medium output power
High linearity
Power gain
Noise Figure
Supply voltage
Port impedance
: f
u
= 2.8 GHz TYP. @ 3 dB bandwidth
: I
CC
= 24.5 mA TYP.
: P
O (sat)
= +15.5 dBm TYP. @ f = 0.95GHz
: P
O (sat)
= +12.5 dBm TYP. @ f = 2.15 GHz
: P
O (1dB)
= +9.0 dBm TYP. @ f = 0.95 GHz
: P
O (1dB)
= +7.0 dBm TYP. @ f = 2.15 GHz
: G
P
= 32.5 dB TYP. @ f = 0.95 GHz
: G
P
= 33.5 dB TYP. @ f = 2.15 GHz
: NF = 3.7 dB TYP. @ f = 0.95 GHz
: NF = 3.7 dB TYP. @ f = 2.15 GHz
: V
CC
= 4.5 to 5.5 V
: input/output 50
APPLICATIONS
IF amplifiers in LNB for DBS converters etc.
ORDERING INFORMATION
Part Number
PC3225TB-E3
Order Number
Package
Marking
C3M
Supplying Form
Embossed tape 8 mm wide.
1, 2, 3 pins face the perforation side of the tape.
Qty 3 kpcs/reel.
PC3225TB-E3-A 6-pin super minimold
(Pb-Free)
Note
Note
With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark
To order evaluation samples, please contact your nearby sales office
Part number for sample order:
PC3225TB.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10500EJ01V0DS (1st edition)
Date Published December 2004 CP(K)
NEC Compound Semiconductor Devices, Ltd. 2004