3 V SILICON RFIC
UPC8106TB
FREQUENCY UPCONVERTER
FEATURES
• RECOMMENDED OPERATING FREQUENCY:
f
RFout
= 0.4 GHz to 2.0 GHz
f
IFin
= 100 MHz to 400 MHz
• SUPPLY VOLTAGE:
V
CC
= 2.7 to 5.5 V
• HIGH DENSITY SURFACE MOUNTING:
6 pin super mini mold package
• LOW CARRIER LEAKAGE:
Due to double balanced mixer
• BUILT-IN POWER SAVE FUNCTION
LO Input
GND
IF Input
INTERNAL BLOCK DIAGRAM
(Top View)
3
2
1
4
V
PS
5
V
CC
6
RF Output
DESCRIPTION
NEC's UPC8106TB is a silicon RFIC designed as a frequency
upconverter for cellular/cordless telephone transmitter stages
and features improved intermodulation. This device is housed
in a 6 pin super mini mold or SOT-363 package making it ideal
for reducing system size. The UPC8106TB is manufactured
using NEC's 20 GHz f
T
NESAT
TM
III silicon bipolar pro-
cess.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
APPLICATION
• CELLULAR/CORDLESS TELEPHONE
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, V
CC
= V
RFout
= 3 V, f
IFin
= 240 MHz, P
LOin
= -5 dBm, V
PS
≥
2.7 V unless otherwise specified)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
CG
P
SAT
OIP
3
PARAMETERS AND CONDITIONS
Circuit Current at V
PS
≥
2.7 V
V
PS
= 0 V
Conversion Gain at f
RFout
= 0.9 GHz, P
IFin
= -30 dBm
f
RFout
= 1.9 GHz, P
IFin
= -30 dBm
Saturated Output Power at f
RFout
= 0.9 GHz, P
IFin
= 0 dBm
f
RFout
= 1.9 GHz, P
IFin
= 0 dBm
Output Third-Order Intercept Point at
f
IFin1
= 240.0 MHz
f
IFin2
= 240.4 MHz
P
IFin
= -20 dBm
Third-Order Intermodulation Level at
f
IFin1
= 240 MHz
f
IFin2
= 240.4 MHz
P
IFin
= -20 dBm
SSB Noise Figure, f
RFout
= 0.9 GHz
Power Save Rise Time at V
PS
: GND→V
CC
Power Save Fall Time at V
PS
: V
CC
→GND
UNITS
mA
µA
dB
dB
dBm
dBm
MIN
4.5
6
4
-4
-6.5
UPC8106TB
S06
TYP
9
9
7
-2
-4
MAX
13.5
10
12
10
f
RFout
= 0.9 GHz
f
RFout
= 1.9 GHz
dBm
dBm
+5.5
+2.0
IM
3
f
RFout
= 0.9 GHz
f
RFout
= 1.9 GHz
dBc
dBc
dB
µS
µS
-31
-30
8.5
2.0
2.0
NF
T
PS(RISE)
T
PS(FALL)
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
