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UPC8112TB-E3-A 参数 Datasheet PDF下载

UPC8112TB-E3-A图片预览
型号: UPC8112TB-E3-A
PDF下载: 下载PDF文件 查看货源
内容描述: 3 V硅MMIC L波段降频转换器 [3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER]
分类和应用: 转换器电信集成电路光电二极管ISM频段
文件页数/大小: 5 页 / 173 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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3 V SILICON MMIC L-BAND
FREQUENCY DOWN CONVERTER
FEATURES
• HIGH DENSITY SURFACE MOUNTING:
6 Pin Super Minimold or SOT-363 Package
• BROADBAND OPERATION:
RF = 0.8 to 2.0 GHz
IF = 100 to 300 MHz
• INPUT IP
3
:
-7 dBm
• POWER SAVE FUNCTION
• SUPPLY VOLTAGE:
V
CC
= 2.7 to 3.3 V
UPC8112TB
INTERNAL BLOCK DIAGRAM
RF
Input
IF
Output
POWER
SAVE
DESCRIPTION
NEC's UPC8112TB is a silicon RFIC manufactured using the
NESAT III process. This device consists of a mixer, an IF
amplifier and a LO buffer amplifier. This device is suitable as
a 1st IF downconverter for the receiver stage of cellular and
other wireless systems. The UPC8112TB is pin compatible
and has comparable performance as the larger UPC8112T, so
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Circuit Current (no input signal) V
CC
= 3.0 V
V
PS
= 0.5 V
RF Frequency Response
IF Frequency Response
1
Conversion Gain
f
RFin
= 900 MHz, f
LOin
= 1000 MHz
f
RFin
= 1.5 GHz, f
LOin
= 1.6 GHz
f
RFin
= 1.9 GHz, f
LOin
= 1.66 GHz
Single Side Band Noise Figure (SSB)
f
RFin
= 900 MHz, f
LOin
= 1000 MHz
f
RFin
= 1.5 GHz, f
LOin
= 1.6 GHz
f
RFin
= 1.9 GHz, f
LOin
= 1.66 GHz
Output Power at 1 dB gain compression, f
RFin
= 1.9 GHz
f
LOin
= 1.66 GHz
Saturated Output Power
f
RFin
= 900 MHz, f
LOin
= 1000 MHz
f
RFin
= 1.9 GHz, f
LOin
= 1.66 GHz
(P
RFin
= -10 dBm)
Input 3rd Order Intercept Point,
f
RFIN
= 900 MHz, f
LOIN
= 1000 MHz
f
RFin
= 1.5 GHz, f
LOin
= 1.6 GHz
f
RFin
= 1.9 GHz, f
LOin
= 1.66 GHz
LO Leakage at RF pin, f
RF
in = 900 MHz, f
LO
in = 1000 MHz
f
RFin
= 1.5 GHz, f
LOin
= 1.6 GHz
f
RF
in = 1.9 GHz, f
LO
in = 1.66 GHz
LO Leakage at IF pin, f
RF
in = 900 MHz, f
LO
in = 1000 MHz
f
RFin
= 1.5 GHz, f
LOin
= 1.6 GHz
f
RF
in = 1.9 GHz, f
LO
in = 1.66 GHz
RF Leakage at LO Pin f
RF
in = 900 MHz, f
LO
in = 1000 MHz
2
f
RFin
= 1.5 GHz, f
LOin
= 1.6 GHz
2
f
RF
in = 1.9 GHz, f
LO
in = 1.66 GHz
2
Thermal Resistance (Junction to Ambient) Mounted on a
50 x 50 x 1.6 mm epoxy glass PWB
2. P
RFin
= -30 dBm
LO
Input
V
CC
GND
it is suitable for use as a replacement to help reduce system
size. The IC is housed in a 6 pin super minimold or SOT-363
package.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°C,
V
CC
= V
PS
= 3.0 V, P
LO
= -10 dBm)
SYMBOLS
I
CC
f
RFin
f
IFout
CG
UNITS
mA
µA
GHz
MHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
MIN
4.9
0.8
100
11.5
9.5
UPC8112TB
S06
TYP
8.5
1.9
250
15
13
13
9.0
11
11.2
-5
-2.5
-3
MAX
11.7
0.1
2.0
300
17.5
15.5
11
13.2
NF
P
1dB
P
SAT
-6.5
-7
IIP
3
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
°C/W
-10
-9
-7
-45
-46
-45
-32
-33
-30
-80
-57
-55
325
LO
RF
LO
IF
RF
LO
R
TH(JA)
Notes:
1. External matching required.
California Eastern Laboratories