SILICON RFIC
LOW CURRENT AMPLIFIER FOR UPC8151TB
CELLULAR/CORDLESS TELEPHONES
FEATURES
• SUPPLY VOLTAGE:
Vcc = 2.4 to 3.3 V
• LOW CURRENT CONSUMPTION:
UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V
Gain, G
P
(dB)
+20
INSERTION POWER GAIN vs.
FREQUENCY AND VOLTAGE
Tuned at 1 GHz
• HIGH EFFICIENCY:
UPC8151TB; P
1dB
= +2.5 dBm TYP @ f = 1 GHz
• POWER GAIN:
UPC8151TB; G
P
= 12.5 dB TYP @ f = 1 GHz
• OPERATING FREQUENCY:
100 MHz to 1900 MHz (Output port LC matching)
• EXCELLENT ISOLATION:
UPC8151TB; ISOL = 38 dB TYP @ f = 1 GHz
• HIGH DENSITY SURFACE MOUNTING:
6 pin super minimold or SOT-363 package
V
CC
= 3.3 V
+10
0
V
CC
= 3.0 V V
CC
= 2.4 V
-10
0.3
1.0
3.0
Frequency, f (GHz)
+20
DESCRIPTION
Gain, G
P
(dB)
Tuned at 1.9 GHz
NEC's UPC8151TB is a silicon RFIC designed as a buffer
amplifier for cellular or cordless telephones. This low current
amplifier operates on 3.0 V and is housed in a 6 pin super
minimold package.
The IC is manufactured using NEC's 20 GHz f
T
NESAT™ III
silicon bipolar process. This process uses silicon nitride
passivation film and gold electrodes. These materials protect
the chip surface from external pollution and prevent corrosion/
migration. Thus, this IC has excellent performance, uniformity
and reliability.
V
CC
= 3.0 V
+10
V
CC
= 3.3 V
0
-10
0.3
1.0
3.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°C,
V
CC
= V
OUT
= 3.0 V, Z
L
= Z
S
= 50
Ω,
at LC matched frequency)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
Icc
G
P
ISOL
P
1dB
PARAMETERS AND CONDITIONS
Circuit Current, No signal
Power Gain
Isolation
f = 1.00 GHz
f = 1.90 GHz
f = 1.00 GHz
f = 1.90 GHz
UNITS
mA
dB
dB
MIN
2.8
9.5
12.0
33.0
29.0
-1.0
-3.0
–
–
2.0
1.0
UPC8151TB
SO6
TYP
4.2
12.5
15.0
38.0
34.0
+2.5
+0.5
6.0
6.0
5.0
4.0
10.0
12.0
-62.0
54.0
MAX
5.8
14.5
17.0
–
–
–
–
7.5
7.5
–
–
Output Power at 1 dB Compression Point
f = 1.00 GHz
f = 1.90 GHz
Noise Figure
f = 1.00 GHz
f = 1.90 GHz
dBm
dB
NF
RL
IN
Input Return Loss(without matching circuit)
f = 1.00 GHz
f = 1.90 GHz
Output Return Loss (with external matching circuit)
f = 1.00 GHz
f = 1.90 GHz
3rd Order Intermodulation Distortion
f
1
= 1.000 GHz, f
2
= 1.001 GHz, P
O(each)
= -20 dBm
f
1
= 1.900 GHz, f
2
= 1.901 GHz, P
O(each)
= -20 dBm
dB
RL
OUT
dB
IM
3
dBc
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
