3 V SILICON RFIC
FREQUENCY UPCONVERTER
FEATURES
• RECOMMENDED OPERATING FREQUENCY:
f
RFOUT
= 0.8 GHz to 2.0 GHz
f
IFIN
= 50 MHz to 300 MHz
• SUPPLY VOLTAGE:
V
CC
= 2.7 to 3.3 V
• HIGH DENSITY SURFACE MOUNTING:
6-pin super minimold package
• HIGH IP
3
:
OIP
3
= +9.5 dBm @ f
RFOUT
= 900 MHz
•
MINIMIZED CARRIER LEAKAGE:
Due to double balanced mixer
IF input
1
LO input
3
UPC8163TB
BLOCK DIAGRAM
(Top View)
4
GND
GND
2
5
V
CC
6 RF output
DESCRIPTION
NEC's UPC8163TB is a silicon RFIC designed as a frequency
upconverter for cellular/cordless telephone transmitter stages,
and features improved intermodulation. This device is housed
in a 6 pin super mini mold or SOT-363 package making it ideal
for reducing system size. The UPC8106TB is manufactured
using NEC's 20 GHz f
T
NESAT
TM
III silicon bipolar pro-
cess.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
APPLICATIONS
• Digital Cellular/Cordless Phones
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, V
CC
= V
RFOUT
= 3.0 V, f
IFIN
= 240 MHz, P
LOIN
= -5 dBm unless otherwise specified)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
CG
P
SAT
OIP
3
PARAMETERS AND CONDITIONS
Circuit Current (no signal)
Conversion Gain
Saturated Output Power
f
RFOUT
= 0.9 GHz, P
IFIN =
-30 dBm
f
RFOUT
= 1.9 GHz, P
IFIN =
-30 dBm
f
RFOUT
= 0.9 GHz
f
RFOUT
= 1.9 GHz
UNITS
mA
dB
dB
dBm
dBm
MIN
11.5
6
4
-1.5
-4.5
UPC8163TB
S06
TYP
16.5
9
7
0.5
-2
MAX
23
12
10
Output third Order Intercept Point,
f
IFIN1
= 240 MHz
f
IFIN2
= 240.4 MHz
P
IFIN =
-20 dBm
SSB Noise Figure
f
RFOUT
= 0.9 GHz
f
RFOUT
= 1.9 GHz
dBm
dBm
dB
dB
+9.5
+6.0
12.5
12.5
NF
f
RFOUT
= 0.9 GHz
f
RFOUT
= 1.9 GHz
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
