SILICON RFIC
LOW CURRENT AMPLIFIER
FOR MOBILE COMMUNICATIONS
FEATURES
•
LOW CURRENT CONSUMPTION
I
CC
= 1.9 mA TYP @ V
CC
= 3.0 V
• SUPPLY VOLTAGE:
V
CC
= 2.4 to 3.3 V
• EXCELLENT ISOLATION:
ISOL = 39 dB TYP @ f = 1.0 GHz
ISOL = 40 dB TYP @ f = 1.9 GHz
ISOL = 38 dB TYP @ f = 2.4 GHz
• POWER GAIN:
G
P
= 11.0 dB TYP @ f = 1.0 GHz
G
P
= 11.5 dB TYP @ f = 1.9 GHz
G
P
= 11.5 dB TYP @ f = 2.4 GHz
• OPERATING FREQUENCY:
0.1 to 2.4 GHz (Output port LC matching)
• 1 dB GAIN COMPRESSION OUTPUT POWER:
P
O(1 dB)
= -4.0 dBm TYP @ f = 1.0 GHz
P
O(1 dB)
= -7.0 dBm TYP @ f = 1.9 GHz
P
O(1 dB)
= -7.5 dBm TYP @ f = 2.4 GHz
• HIGH-DENSITY SURFACE MOUNTING:
6-pin super minimold package (2.0 x 1.25 x 0.9 mm)
•
LOW WEIGHT:
7 mg (Standard Value)
+20
UPC8178TB
POWER GAIN vs. FREQUENCY
V
CC
= 3.0 V
1.0 GHz
+10
T
A
= -40°C
T
A
= +25°C
T
A
= +85°C
0
2.4 GHz
-10
-20
1.9 GHz
-30
-40
0.1
0.3
1.0
3.0
DESCRIPTION
The UPC8178TB is a silicon monolithic integrated circuit
designed as an amplifier for mobile communications. This IC
can realize low current consumption with an external chip
inductor which cannot be realized on an internal 50
Ω
wideband
matched IC. This low current amplifier operates on 3.0 V. This
device is manufactured using NEC's 30 GHz fmax UHS0 (Ultra
High Speed Process) silicon bipolar process which uses direct
silicon nitride passivation film and gold electrodes. These
materials can protect the chip surface from pollution and
prevent corrosion/migration. Thus, this IC has excellent perfor-
mance, uniformity and reliability.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
UPC8178TB
S06
UNITS
mA
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
MIN
1.4
9.0
9.0
9.0
34
35
33
-8.0
-11.0
-11.5
–
–
–
4
5
6.5
TYP
1.9
11.0
11.5
11.5
39
40
38
-4.0
-7.0
-7.5
5.5
5.5
5.5
7
8
9.5
MAX
2.4
13.0
13.5
13.5
–
–
–
–
–
–
7.0
7.0
7.0
–
–
–
APPLICATIONS
• Buffer Amplifiers on 0.1 to 2.4 GHz mobile
communications system
ELECTRICAL CHARACTERISTICS
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
G
P
Power Gain
ISOL
Isolation
P
O(1dB)
1 dB Gain Compression Output Power
NF
Noise Figure
RLin
Input Return Loss
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
PARAMETERS AND CONDITIONS
1
Circuit Current (no signal)
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
(T
A
= 25°C, V
CC
= V
OUT
= 3.0 V, Z
S
= Z
L
= 50
Ω,
at LC matched frequency unless otherwise specified))
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
