SILICON RFIC LOW
CURRENT AMPLIFIER UPC8179TB
FOR MOBILE COMMUNICATIONS
FEATURES
• HIGH DENSITY SURFACE MOUNTING:
6 Pin Super Minimold Package (2.0 x 1.25 x 0.9 mm)
• SUPPLY VOLTAGE:
V
CC
= 2.4 to 3.3 V
• HIGH EFFICIENCY:
P
O
(1dB) = +3.0 dBm TYP at f = 1.0 GHz
P
O
(1dB) = +1.5 dBm TYP at f = 1.9 GHz
P
O
(1dB) = +1.0 dBm TYP at f = 2.4 GHz
• POWER GAIN:
G
P
= 13.5 dB TYP at f = 1.0 GHz
G
P
= 15.5 dB TYP at f = 1.9 GHz
G
P
= 15.5 dB TYP at f = 2.4 GHz
• EXCELLENT ISOLATION:
ISL = 44 dB TYP at f = 1.0 GHz
ISL = 42 dB TYP at f = 1.9 GHz
ISL = 41 dB TYP at f = 2.4 GHz
• LOW CURRENT CONSUMPTION:
I
CC
= 4.0 mA TYP AT VCC = 3.0 V
• OPERATING FREQUENCY:
I
CC
= 4.0 mA TYP AT VCC = 3.0 V
• LIGHT WEIGHT:
7 mg (standard Value)
POWER GAIN vs. FREQUENCY
+20
V
CC
= 3.0 V
+10
T
A
= -40°C
T
A
= +25°C
T
A
= +85°C
0
2.4 GHz
–10
–20
1.0 GHz
–30
1.9 GHz
–40
0.1
0.3
1.0
3.0
Output match for best performance
at each frequency
DESCRIPTION
NEC's UPC8179TB is a silicon monolithic integrated circuit
designed as amplifier for mobile communications. This IC can
realize low current consumption with external chip inductor
which can be realized on internal 50Ω wideband matched IC.
This low current amplifier uns on 3.0 V. This IC is manufactured
using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process)
silicon bipolar process. This process uses direct silicon nitride
passivation film and gold electrodes. These materials can
protect the chip surface from pollution and prevent corrosion/
migration. Thus this IC has exellent performance uniformity
and reliability.
APPLICATIOIN
• Buffer amplifiers for 0.1 to 2.4 GHz mobile communications
systems.
ELECTRICAL CHARACTERISTICS,
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
GP
Power Gain,
PARAMETERS AND CONDITIONS
Circuit Current (no input signal)
f = 1.0 GHz, P
IN
= -30 dBm
f = 1.9 GHz, P
IN
= -30 dBm
f = 2.4 GHz, P
IN
= -30 dBm
f = 1.0 GHz, P
IN
= -30 dBm
f = 1.9 GHz, P
IN
= -30 dBm
f = 2.4 GHz, P
IN
= -30 dBm
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 1.0 GHz, P
IN
= -30 dBm
f = 1.9 GHz, P
IN
= -30 dBm
f = 2.4 GHz, P
IN
= -30 dBm
(Unless otherwise specified, T
A
= +25°C, V
CC
= V
OUT
= 3.0 V, Z
S
= Z
L
= 50Ω, at LC matched Frequency)
UPC8179TB
S06
UNITS
mA
dB
MIN
2.9
11.0
13.0
13.0
39.0
37.0
36.0
-0.5
-2.0
-3.0
–
–
–
4.0
4.0
6.0
TYP
4.0
13.5
15.5
15.5
44.0
42.0
41.0
3.0
1.5
1.0
5.0
5.0
5.0
7.0
7.0
9.0
MAX
5.4
15.5
17.5
17.5
–
–
–
–
–
–
6.5
6.5
6.5
–
–
–
ISOL
Isolation,
dB
P
1dB
Output Power at
1 dB gain
compression,
Noise Figure,
dB
NF
dB
RL
IN
Input Return Loss,
(without matching
circuit)
dB
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
