NEC's SILICON MMIC LOW
CURRENT AMPLIFIER UPC8179TK
FOR MOBILE COMMUNICATIONS
FEATURES
• HIGH DENSITY SURFACE MOUNTING:
6 Pin Leadless Minimold Package (1.5 x 1.1 x 0.55 mm)
• SUPPLY VOLTAGE:
V
CC
= 2.4 to 3.3 V
• HIGH EFFICIENCY:
P
O
(1dB) = +2.0 dBm TYP at f = 1.0 GHz
P
O
(1dB) = +0.5 dBm TYP at f = 1.9 GHz
P
O
(1dB) = +0.5 dBm TYP at f = 2.4 GHz
• POWER GAIN:
G
P
= 13.5 dB TYP at f = 1.0 GHz
G
P
= 15.5 dB TYP at f = 1.9 GHz
G
P
= 16.0 dB TYP at f = 2.4 GHz
• EXCELLENT ISOLATION:
ISL = 43 dB TYP at f = 1.0 GHz
ISL = 42 dB TYP at f = 1.9 GHz
ISL = 42 dB TYP at f = 2.4 GHz
• LOW CURRENT CONSUMPTION:
I
CC
= 4.0 mA TYP AT VCC = 3.0 V
• OPERATING FREQUENCY:
0.1 to 2.4 GHz (Output port LC matching)
• LIGHT WEIGHT:
3 mg
2.0
±
0.2
0.48 0.48
1
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE TK
1.3
±
0.05
1.1
±
0.1
0.16
±
0.05
BOTTOM
6
2
5
3
4
0.2
±
0.1
0.9
0.55
±
0.03
0.11
+0.10
-0.05
DESCRIPTION
NEC's UPC8179TK is a silicon monolithic integrated circuit
designed as an amplifier for mobile communications. This IC
can realize low current consumption with external chip induc-
tor. The incorporation of a chip identical to the conventional 6-
pin super minimold package (2.0 x 1.25 x 0.9 mm)
μPC8179TB
in a 6-pin leadless minimold package (1.5 x 1.1 x 0.55 mm) has
enabled a reduction in mounting area of 50 %. The
μPC8179TK
is ideally suited to replace the
μPC8179TB
for footprint reduc-
tion and increased design density. This IC is manufactured
using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process)
silicon bipolar process. This process uses direct silicon nitride
passivation film and gold electrodes. These materials can
protect the chip surface from pollution and prevent corrosion/
migration. Thus this IC has excellent performance uniformity
and reliability.
NEC's stringent quality assurance and test procedures assure
the highest performance. consistency and reliability.
UPC8179TK
TK
UNITS
mA
dB
MIN
2.9
11.0
13.0
14.0
39.0
37.0
37.0
-0.5
-2.0
-3.0
–
–
–
4.0
4.0
6.0
TYP
4.0
13.5
15.5
16.0
43.0
42.0
42.0
2.0
0.5
0.5
5.0
5.0
5.0
7.0
7.0
9.0
MAX
5.4
15.5
17.5
18.5
–
–
–
–
–
–
6.5
6.5
6.5
–
–
–
APPLICATION
• Buffer amplifiers for 0.1 to 2.4 GHz mobile communications
systems.
ELECTRICAL CHARACTERISTICS,
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
GP
Power Gain,
PARAMETERS AND CONDITIONS
Circuit Current (no input signal)
f = 1.0 GHz, P
IN
= -30 dBm
f = 1.9 GHz, P
IN
= -30 dBm
f = 2.4 GHz, P
IN
= -30 dBm
f = 1.0 GHz, P
IN
= -30 dBm
f = 1.9 GHz, P
IN
= -30 dBm
f = 2.4 GHz, P
IN
= -30 dBm
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 1.0 GHz, P
IN
= -30 dBm
f = 1.9 GHz, P
IN
= -30 dBm
f = 2.4 GHz, P
IN
= -30 dBm
(Unless otherwise specified, T
A
= +25°C, V
CC
= V
OUT
= 3.0 V, Z
S
= Z
L
= 50Ω, at LC matched Frequency)
ISOL
Isolation,
dB
P
1dB
Output Power at
1 dB gain
compression,
Noise Figure,
dBm
NF
dB
RL
IN
Input Return Loss,
(without matching
circuit)
dB
CEL [ CALIFORNIA EASTERN LABS ]
