3 V, SILICON MMIC MEDIUM
OUTPUT POWER AMPLIFIER
FOR MOBILE COMMUNICATIONS
FEATURES
• SUPPLY VOLTAGE:
V
CC
= 2.7 to 3.3 V
• CIRCUIT CURRENT:
I
CC
= 23.0 mA TYP at V
CC
= 3.0 V
Gain, G
P
(dB)
30
UPC8181TB
NOISE FIGURE, POWER GAIN vs.
FREQUENCY
V
CC
= 3.0 V
25
G
P
20
•
POWER GAIN:
G
P
= 19.0 dB TYP at f = 0.9 GHz
G
P
= 21.0 dB TYP at f = 1.9 GHz
G
P
= 22.0 dB TYP at f = 2.4 GHz
• MEDIUM OUTPUT POWER:
P
O(1dB)
= +8.0 dBm TYP at f = 0.9 GHz
P
O(1dB)
= +7.0 dBm TYP at f = 1.9 GHz
P
O(1dB)
= +7.0 dBm TYP at f = 2.4 GHz
•
UPPER LIMIT OPERATING FREQUENCY:
f
U
= 4.0 GHz TYP at 3 dB bandwidth (Standard value)
• HIGH-DENSITY SURFACE MOUNTING:
6-pin super minimold package (2.0 x 1.25 x 0.9 mm)
5
15
10
N
F
4
5
3
0
0.1
0.3
1.0
3.0
Frequency, f (GHz)
DESCRIPTION
NEC's UPC8181TB is a silicon Monolithic Microwave Inte-
grated Circuit designed as an amplifier for mobile communica-
tions. This IC operates at 3 volts. The medium output power
is suitable for RF-TX of mobile communication systems.
This IC is manufactured using NEC's 30 GHz f
max
UHS0 (Ultra
High Speed process) silicon bipolar process. This process
uses direct silicon nitride passivation film and gold electrodes.
These materials can protect the chip surface from pollution and
prevent corrosion/migration. This IC has excellent perfor-
mance, uniformity, and reliability.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
APPLICATIONS
• Buffer amplifiers for 1.9 GHz to 2.4 GHz mobile
communication systems.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, V
CC
= V
OUT
= 3.0 V, Z
S
= Z
L
= 50Ω)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
G
P
PARAMETERS AND CONDITIONS
Circuit Current (no signal)
Power Gain,
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
UNITS
mA
dB
MIN
–
16.0
18.0
19.0
–
–
–
–
28.0
27.0
26.5
UPC8181TB
S06
TYP
23.0
19.0
21.0
22.0
4.5
4.5
4.5
4.0
33.0
32.0
31.5
MAX
30.0
22.0
24.0
25.0
6.0
6.0
6.0
–
–
–
–
NF
Noise Figure,
dB
f
U
ISL
Upper Limit Operating Frequency, 3 dB down below from gain at f = 0.1 GHz
Isolation,
GHz
dB
CEL [ CALIFORNIA EASTERN LABS ]
