celduc
®
r
e
l
a
i
s
S/CON/SOM02060/A/08/12/05
PRELIMINARY DATA
Page 4/5 UK
CHARACTERISTIC CURVES
Fig. 5
Ic (mADC)
50
45
40
35
30
25
20
15
10
5
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32
Uc (VDC)
INPUT CHARACTERISTIC
Fig. 6
ON RESISTANCE VS JUNCTION TEMPERATURE
-35°C
-35°C
25°C
100°C
RDSon
40
(mOhms)
35
30
25
20
15
10
5
0
-50
0
50
100
150
Junction Temperature (°C)
Fig. 7
Permanent current
Ie (ARMS)
POWER DISSIPATED AND LOAD CURRENT LIMIT VS TEMPERATURE
Please refer to the installation notice for precautions
about mounting the device on a heatsink.
Power dissipated
(W)
25
10K/W
4K/W
2,1K/W
1.1K/W
22.5
20
14.4
15
8.1
10
3.6
5
0.9
2.2K/W
1.2K/W
0
0
10
20
30
40
50
60
70
80
90
100
0
110
Ambient temperature (°C)
10K/W = No Heatsink
2.1K/W = WF210000
4K/W = 150x150x3mm aluminium sheet
1.2K/W = WF121000
2.2K/W = WF262100
1.1K/W = WF131100
2.2K/W = WF151200
Fig. 8
PEAK OVERLOAD CURRENT vs. PULSE DURATION CHARACTERISTIC
Ie 220
(Apk) 200
180
160
140
120
100
80
60
Repetitive D=20% (Tc=100°C, Tjmax=175°C)
Repetitive D=50%(Tc=100°C, Tjmax=125°C)
Non-repetitive D=1% (Tc=100°C, Tjmax=175°C)
Repetitive D=5% (Tc=100°C, Tjmax=175°C)
Repetitive D=10% (Tc=100°C, Tjmax=175°C)
t
1
D
(
%
)
=
×
100
t
2
40
20
0
0,1
1
10
100
1000
Pulse duration (ms)
CELDUC [ celduc-relais ]
