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2N2326 参数 Datasheet PDF下载

2N2326图片预览
型号: 2N2326
PDF下载: 下载PDF文件 查看货源
内容描述: 可控硅整流1.6安培, 25 THRU 400伏 [SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS]
分类和应用: 栅极触发装置可控硅整流器
文件页数/大小: 2 页 / 131 K
品牌: CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
 浏览型号2N2326的Datasheet PDF文件第2页  
2N2322
2N2323
2N2324
2N2325
2N2326
2N2327
2N2328
2N2329
Central
TM
Semiconductor Corp.
SILICON CONTROLLED RECTIFIER
1.6 AMPS, 25 THRU 400 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2322
Series types are hermetically sealed Silicon
Controlled Rectifiers designed for sensing
circuit applications and control systems.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS:
(TC=25°C unless otherwise noted)
SYMBOL 22
23
Peak Repetitive Forward Voltage
Peak Repetitive Reverse Voltage
Non-Repetitive Peak Reverse Voltage
RMS On-State Current
Average On-State Current (TC=85°C)
Peak One Cycle Surge (t=8.3ms)
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Junction Temperature
Storage Temperature
VDRM
VRRM
VRSM
IT(RMS)
IT(AV)
ITSM
PGM
PG(AV)
IGM
VGM
TJ
Tstg
25
25
40
50
50
75
2N23__
24
100
100
150
25
150
150
225
26
200
200
300
27
250
250
350
28
300
300
400
29 UNITS
400
400
500
V
V
V
A
A
A
W
W
A
V
°C
°C
1.6
1.0
15
0.10
0.01
0.10
6.0
-65 to +125
-65 to +150
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IDRM, IRRM
IGT
IH
VGT
VTM
Rated VDRM, VRRM, RGK=1.0kΩ
VD=6.0V, RL=100Ω
VD=6.0V, RGK=1.0kΩ
VD=6.0V, RL=100Ω
ITM=1.0A, tp=380μs
5.0
200
2.0
0.8
1.5
UNITS
μA
μA
mA
V
V
R0 (11-December 2008)