Small Signal NPN Transistors
TO-72 Case
TYPE NO.
DESCRIPTION
VCBO VCEO VEBO ICBO @ VCB
(V)
MIN
(V)
MIN
15
15
15
60
15
13
15
15
12
15
(V)
MIN
3.0
3.0
3.0
15
2.5
3.0
2.0
2.5
2.5
2.5
µ
(µA)
MAX
0.001
--
0.01
0.01
0.01
0.01
0.02
0.01
0.02
0.01
15
--
15
90
15
15
1.0
15
15
15
(V)
hFE
@ IC @ VCE
(mA)
(V)
VCE (SAT) @ IC
(V)
MAX
(mA)
fT
(MHz)
MIN
Cob
*Ccb
(pF)
MAX
1.7
1.7
1.7
30
1.0*
2.5
1.0*
1.0*
1.0*
1.5*
MIN
20
20
20
MAX
--
200
--
3.0
3.0
3.0
10
3.0
4.0
2.0
3.0
3.0
25
1.0
10
1.0
5.0
1.0
10
8.0
1.0
1.0
1.0
2N917
2N917A
2N918
2N998
2N2857
2N2865
2N3478
2N3839
2N5179
BFY90
RF/IF OSCILLATOR
RF/IF OSCILLATOR
RF/IF OSCILLATOR
DARLINGTON
VHF/UHF OSC
RF/IF OSCILLATOR
VHF/UHF LOW NOISE
VHF/UHF AMPL/OSC
VHF/UHF AMPL/OSC
VHF/UHF AMPL/OSC
30
30
30
100
30
25
30
30
20
30
0.5
--
0.4
1.8
--
0.4
--
--
0.4
--
3.0
--
10
100
--
10
--
--
10
--
500
600
600
60
1,000
600
750
1,000
900
1,000
1,600 8,000
30
20
25
30
25
20
150
200
150
150
250
125
Shaded areas indicate Darlington.
Dual Transistors
TO-71 Case
PD @ TA=25
o
C=360mW Total (Both Die Equal Power)
TYPE NO.
DESCRIPTION
VCBO VCEO VEBO ICBO @ VCB
(V)
(V)
(V)
(nA)
(V)
MIN
CEN741
CEN832
NPN LOW NOISE
PNP LOW NOISE
45
60
MIN
45
60
MIN
6.0
5.0
MAX
10
10
45
50
hFE
MIN
150
150
MAX
600
450
0.01
1.0
5.0
5.0
@ IC @ VCE VCE (SAT) @ IC
(mA) (V)
(V)
(mA)
MAX
0.35
0.25
1.0
1.0
MATCHING
hFE
%
20
20
VBE
(mV)
5.0
5.0
69
w w w. c e n t r a l s e m i . c o m
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
