2N3905
2N3906
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3905 and
2N3906 types are PNP silicon transistors designed for
general purpose amplifier and switching applications.
NPN complementary types are 2N3903 and 2N3904.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
hfe
fT
Cob
Cib
NF
ton
toff
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
2N3905
MIN
MAX
-
50
40
-
40
-
5.0
-
-
0.25
-
0.4
0.65
0.85
-
0.95
30
-
40
-
50
150
30
-
15
-
50
200
200
-
-
4.5
-
10
-
-
-
5.0
70
260
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
V
V
V
V
V
V
V
40
40
5.0
200
625
-65 to +150
200
2N3906
MIN
MAX
-
50
40
-
40
-
5.0
-
-
0.25
-
0.4
0.65
0.85
-
0.95
60
-
80
-
100
300
60
-
30
-
100
400
250
-
-
4.5
-
10
-
-
-
4.0
70
300
CHARACTERISTICS:
(TA=25°C)
TEST CONDITIONS
VCE=30V, VEB=3.0V
IC=10μA
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=1.0V, IC=0.1mA
VCE=1.0V, IC=1.0mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=50mA
VCE=1.0V, IC=100mA
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=20V, IC=10mA, f=100MHz
VCB=5.0V, IE=0, f=100kHz
VEB=0.5V, IC=0, f=100kHz
VCE=5.0V, IC=100μA, RS=1.0kΩ
f=10Hz to 15.7kHz
VCC=3.0V, VBE(OFF)=0.5V, IC=10mA
IB1=1.0mA
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
MHz
pF
pF
dB
ns
ns
R2 (17-October 2011)
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
