2N4036
2N4037
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4036, 2N4037
are epitaxial planar PNP Silicon Transistors designed
for small signal, medium power, general purpose
industrial applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS:
(TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
PD
TJ, Tstg
Θ
JC
2N4036
90
65
7.0
1.0
0.5
5.0
1.0
-65 to +200
35
2N4037
MIN
MAX
-
-
-
0.25
-
-
-
-
40
-
-
-
-
15
50
-
-
60
-
-
-
-
100
-
1.0
-
1.4
-
1.5
-
-
250
-
-
-
30
-
-
2N4037
60
40
7.0
UNITS
V
V
V
A
A
W
W
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
2N4036
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=90V
-
1.0
ICBO
VCB=60V
-
-
ICEX
ICEX
IEBO
IEBO
BVCEO
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
hFE
fT
Cob
ton
toff
VCE=85V, VEB=1.5V
VCE=30V, VEB=1.5V, TC=150°C
VEB=7.0V
VEB=5.0V
IC=100mA
IC=150mA, IB=15mA
IC=150mA, IB=15mA
VCE=10V, IC=150mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=150mA
VCE=2.0V, IC=150mA
VCE=10V, IC=500mA
VCE=10V, IC=50mA, f=20MHz
VCB=10V,
VCE=30V,
VCE=30V,
IE=0, f=1.0MHz
IC=150mA, IB1=IB2=15mA
IC=150mA, IB1=IB2=15mA
-
-
-
-
65
-
-
-
20
-
40
20
20
60
-
-
-
100
-
10
-
-
0.65
1.4
-
-
-
140
200
-
-
30
110
700
UNITS
µA
µA
µA
mA
µA
µA
V
V
V
V
MHz
pF
ns
ns
R1 (1-April 2010)
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
