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2N6031 参数 Datasheet PDF下载

2N6031图片预览
型号: 2N6031
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅功率晶体管140伏特, 200瓦 [PNP SILICON POWER TRANSISTOR 140 VOLTS, 200 WATTS]
分类和应用: 晶体晶体管功率双极晶体管局域网
文件页数/大小: 2 页 / 312 K
品牌: CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
 浏览型号2N6031的Datasheet PDF文件第2页  
2N6031
PNP SILICON
POWER TRANSISTOR
140 VOLTS, 200 WATTS
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6031 is
a 16 Ampere PNP Silicon Power Transistor
designed for use in high power amplifiers and
high voltage switching regulator circuits.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS:
(TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ
JC
UNITS
V
V
V
A
A
A
W
°C
°C/W
140
140
7.0
16
20
5.0
200
-65 to +200
0.875
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=140V
ICEX
ICEX
ICEO
IEBO
BVCEO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
fT
Cob
hfe
VCE=140V, VEB(off)=1.5V
VCE=140V, VEB(off)=1.5V, TC=150°C
VCE=70V
VEB=7.0V
IC=200mA
IC=10A, IB=1.0A
IC=16A,
IC=10A,
IB=4.0A
IB=1.0A
15
4.0
1.0
140
MAX
2.0
2.0
7.0
2.0
5.0
1.0
2.0
1.8
1.5
60
UNITS
mA
mA
mA
mA
mA
V
V
V
V
V
VCE=2.0V, IC=8.0A
VCE=2.0V, IC=8.0A
VCE=2.0V, IC=16A
VCE=20V, IC=1.0A, f=500kHz
VCB=10V, IE=0, f=100kHz
VCE=10V, IC=4.0A, f=1.0kHz
MHz
1000
pF
15
R0 (27-August 2009)